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Journal of Electronic Materials
Published in: Journal of Electronic Materials 1/2019

16-10-2018

Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source

Authors: Kenji Iso, Yuya Gokudan, Masumi Shiraishi, Minae Nishikado, Hisashi Murakami, Akinori Koukitu

Published in: Journal of Electronic Materials | Issue 1/2019

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previous article Synthesis of SnO2 Nanoparticles by Electrooxidation Method and Their Application in Dye-Sensitized Solar Cells: The Influence of the Counterion
next article Efficiency Improvements in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Graded Superlattice Last Quantum Barrier and Without Electron Blocking Layer

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Metadata
Title
Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source
Authors
Kenji Iso
Yuya Gokudan
Masumi Shiraishi
Minae Nishikado
Hisashi Murakami
Akinori Koukitu
Publication date
16-10-2018
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 1/2019
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-018-6728-1

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