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2019 | OriginalPaper | Chapter

Wettability Behavior of Si/C and Si–Sn Alloy/C System

Authors : Yaqiong Li, Lifeng Zhang

Published in: Energy Technology 2019

Publisher: Springer International Publishing

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Abstract

During the Si growth process in the zone melting directional solidification experiment, the wettability behavior of Si source/solvent metal and solvent metal/seed substrate is an important issue for Si purification and growth. In this work, the wettability behavior of Si/C and Si-90 wt% Sn alloy/C system was studied by using the sessile drop method. The results show that Si and Si–Sn alloy wet C substrate, and the wettability gradually improves with the holding time due to the generation of a SiC layer in the metal/C interface and the infiltration Si or Si–Sn alloy into C substrate. Moreover, the addition of Sn into Si melt is beneficial for Si to wet C substrate, because Sn hinders the generation of SiC and Si promotes Sn wetting C substrate.

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Metadata
Title
Wettability Behavior of Si/C and Si–Sn Alloy/C System
Authors
Yaqiong Li
Lifeng Zhang
Copyright Year
2019
DOI
https://doi.org/10.1007/978-3-030-06209-5_23