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Published in: Metallurgical and Materials Transactions A 12/2010

01-12-2010

Wetting Properties of Molten Silicon with Graphite Materials

Authors: Arjan Ciftja, Thorvald Abel Engh, Merete Tangstad

Published in: Metallurgical and Materials Transactions A | Issue 12/2010

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Abstract

The wetting behavior of refractory materials by molten silicon is important in the refining and casting of silicon with respect to production of low-cost solar cells. Here we studied the wetting properties of several graphite materials by molten silicon. These materials are used in the photovoltaic industry. The sessile drop method is employed to measure the contact angles. Initially, molten silicon does not wet graphite materials. The initial contact angles measured are approximately 120 deg. Molten silicon will react with C to form β-SiC and to infiltrate the refractory. Because losses of Si should be minimized, infiltration of Si into the refractory also is a problem. Surface roughness increases the contact area between Si and refractory and thus the loss of Si. Equilibrium wetting angles of 0 deg to 31 deg are measured. With increasing surface roughness, the equilibrium wetting angles decrease. The results show that the infiltration depth of molten silicon increases with the average pore size of graphite materials.

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Metadata
Title
Wetting Properties of Molten Silicon with Graphite Materials
Authors
Arjan Ciftja
Thorvald Abel Engh
Merete Tangstad
Publication date
01-12-2010
Publisher
Springer US
Published in
Metallurgical and Materials Transactions A / Issue 12/2010
Print ISSN: 1073-5623
Electronic ISSN: 1543-1940
DOI
https://doi.org/10.1007/s11661-010-0362-8

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