2001 | OriginalPaper | Buchkapitel
Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs
verfasst von : Jaehee Lee, Woo-Seock Cheong, Jae-Hoon Choi, Jae-Chul Om
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
Aktivieren Sie unsere intelligente Suche um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
We report on the enhanced diffusion characteristics of phosphorus in SEG(selective epitaxial growth)-MOSFETs due to in-diffusion from BPSG (borophosphosilicate glass) layer. Because of structural complexity of SEGMOSFETs, three-dimensional simulation was implemented and our results successfully show that a great deal of impurity in-diffusion from BPSG to silicon layer generates a lot of interstitial. Therefore, the diffusivity of phosphorus is increased dramatically by TED effect, causing the characteristics of SEGMOSFETs is degraded severely.