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2001 | OriginalPaper | Buchkapitel

Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs

verfasst von : Jaehee Lee, Woo-Seock Cheong, Jae-Hoon Choi, Jae-Chul Om

Erschienen in: Simulation of Semiconductor Processes and Devices 2001

Verlag: Springer Vienna

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We report on the enhanced diffusion characteristics of phosphorus in SEG(selective epitaxial growth)-MOSFETs due to in-diffusion from BPSG (borophosphosilicate glass) layer. Because of structural complexity of SEGMOSFETs, three-dimensional simulation was implemented and our results successfully show that a great deal of impurity in-diffusion from BPSG to silicon layer generates a lot of interstitial. Therefore, the diffusivity of phosphorus is increased dramatically by TED effect, causing the characteristics of SEGMOSFETs is degraded severely.

Metadaten
Titel
Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs
verfasst von
Jaehee Lee
Woo-Seock Cheong
Jae-Hoon Choi
Jae-Chul Om
Copyright-Jahr
2001
Verlag
Springer Vienna
DOI
https://doi.org/10.1007/978-3-7091-6244-6_61

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