Anzeige
Erschienen in:
01.09.2012
Enhanced hydrophilicity of the Si substrate for deposition of VO2 film by sol–gel method
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2012
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
We have illustrated the role of hydrophilic nature of Si substrate played in the improvement of the contact performance between the vanadium dioxide (VO2) film and Si substrate. The VO2 films were fabricated by sol–gel method on single crystal Si substrate, which was pre-treated with hydrophilic solution and obtained a quite improved hydrophilicity. The bonding of Si substrate with precursor V2O5 gel was interpreted. The morphology and crystalline structure of the films were investigated by field-emission scanning electron microscopy, atomic force microscopy and X-ray diffraction. It is shown that the surface of the film on Si substrate with enhanced hydrophilicity is quite homogeneous and uniform. The film exhibits the formation of VO2 phase with (011) preferred orientation. Moreover, the optical pump induced phase transition property of the film was studied by terahertz time-domain spectroscopy, which revealed around 70% reduction of transmission at 0.1–1.5 THz in the VO2 film across the phase transition.