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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 9/2019

19.03.2019

Enhancement of ferromagnetic properties in (Fe, Ni) co-doped ZnO flowers by pulsed magnetic field processing

verfasst von: Muhammad Tariq, Ying Li, Wenxian Li, Zhongrui Yu, Jiamei Li, Yemin Hu, Mingyuan Zhu, Hongming Jin, Yibing Li, Katerina Skotnicova

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2019

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Abstract

In this study, Zn0.97Fe0.01Ni0.02O diluted magnetic semiconductor (DMS) flowers were fabricated through hydrothermal method with 4 T (Tesla) pulsed magnetic field (PMF). Rietveld refinement of X-ray diffraction (XRD) patterns and Raman analysis indicated that the synthesized samples have the hexagonal wurtzite structure without any other secondary (impurity) phases. The O1s X-ray photoelectron spectroscopy (XPS) and Raman measurements of the synthesized samples showed the existence of oxygen vacancy (VO). The results indicated that PMF could increase the contents of VO and doped ions. The magnetic measurement showed that the room temperature ferromagnetic (RTFM) property of (Fe, Ni) co-doped ZnO is enhanced by PMF. The enhancement of RTFM is attributed to the intrinsic interaction of magnetic ions (Fe3+, Ni2+) via VO created by pulsed magnetic field processing.
Vorheriger Artikel CdS:Eu quantum dots for spintronics and photocatalytic applications
Nächster Artikel Enhanced flux pinning properties in Bi1.6Pb0.4Sr2−xKxCa2Cu3O10+δ compounds

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Metadaten
Titel
Enhancement of ferromagnetic properties in (Fe, Ni) co-doped ZnO flowers by pulsed magnetic field processing
verfasst von
Muhammad Tariq
Ying Li
Wenxian Li
Zhongrui Yu
Jiamei Li
Yemin Hu
Mingyuan Zhu
Hongming Jin
Yibing Li
Katerina Skotnicova
Publikationsdatum
19.03.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 9/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01138-x

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