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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 10/2019

01.04.2019

Enhancing thermoelectric properties of p-type SiGe by SiMo addition

verfasst von: Yixiao Li, Jun Han, Qingpei Xiang, Chuanfei Zhang, Jing Li

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2019

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Abstract

The thermoelectric properties of SiGe–x%SiMo composites are studied from 323 to 1173 K. Electrical conductivity increases with SiMo concentration due to improved carrier mobility and reaches a peak of 1735 S cm−1 when x = 20. The sample SiGe–20%SiMo shows the highest PF of 2.9 mW−1 m−1 K−2 at 1073 K, which is 31.8% higher than the PF value of SiGe. Although total thermal conductivities increase after SiMo addition, the lattice thermal conductivities are reduced due to strengthened phonon scattering by the presence of MoSi2. The ZT of SiGe is 0.64 at 1073 K. It is increased for all the composites in the high-temperature range between 773 and 1073 K, which is beneficial to high temperature application of SiGe alloys. SiGe–20%SiMo shows the highest ZT of 0.79 at 1073 K.
Vorheriger Artikel Luminescence and energy transfer mechanism of KZnPO4: Dy3+, Eu3+
Nächster Artikel A study on the resistivity and mechanical properties of modified nano-Ag coated Cu particles in electrically conductive adhesives

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Metadaten
Titel
Enhancing thermoelectric properties of p-type SiGe by SiMo addition
verfasst von
Yixiao Li
Jun Han
Qingpei Xiang
Chuanfei Zhang
Jing Li
Publikationsdatum
01.04.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01245-9

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