nach oben

Erschienen in:

2010 | OriginalPaper | Buchkapitel

28. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition

verfasst von : Ishwara B. Bhat

Erschienen in: Springer Handbook of Crystal Growth

Verlag: Springer Berlin Heidelberg

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config

KI-gestützte Suche

Aus

Abstract

The properties of silicon carbide materials are first reviewed, with special emphasis on properties related to power device applications. Epitaxial growth methods for SiC are then discussed with emphasis on recent results for epitaxial growth by the hot-wall chemical vapor deposition method. The growth mechanism for maintaining the polytype, namely step-controlled epitaxy, is discussed. Also described is the selective epitaxial growth carried out on SiC at the authorʼs laboratory, including some unpublished work.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Vorheriges Kapitel Growth of Semiconductor Single Crystals from Vapor Phase

Nächstes Kapitel Liquid-Phase Electroepitaxy of Semiconductors

28.1.

T.P. Chow: SiC and GaN high voltage power switching devices, Mater. Sci. Forum 338-342, 1155–1160 (2000)CrossRef

28.2.

R.G. Humphreys, D. Bimberg, W.J. Choyke: Wavelength modulated absorption in SiC, Solid State Comm. 39, 163–167 (1981)ADSCrossRef

28.3.

W.J. Choyke, L. Patrick: Exciton recombination radiation and phonon spectrum of 6H-SiC, Phys. Rev. 127, 1868–1877 (1962)ADSCrossRef

28.4.

W.V. Münch, I. Pfaffeneder: Breakdown field in vapor grown silicon carbide p-n junctions, J. Appl. Phys. 48, 4831–4833 (1977)ADSCrossRef

28.5.

D.K. Ferry: High field transport in wide band gap semiconductors, Phys. Rev. B1 12, 2361–2369 (1975)CrossRef

28.6.

R.P. Joshi: Monte Carlo calculations of the temperataure and field dependent electron transport parameters for 4H-SiC, J. Appl. Phys. 78, 5518–5521 (1995)ADSCrossRef

28.7.

E. Moruan, O. Noblanc, C. Dua, C. Brylinski: SiC microwave power devices, Mater. Sci. Forum 353–356, 669–674 (2001)

28.8.

G.A. Slack: Thermal conductivity of pure and impure silicon, silicon carbide, and diamond, J. Appl. Phys. 35, 3460 (1964)ADSCrossRef

28.9.

M. Bhatnagar, B.J. Baliga: Comparison of 6H-SiC, 3C-SiC and Si power devices, IEEE Trans. Electron. Dev. 40(3), 645–655 (1993)ADSCrossRef

28.10.

T. Kimoto, T. Urushidani, S. Kobayashi, H. Matsunami: High voltage SiC Schottky barrier diodes with low on-resistances, IEEE Electron. Dev. Lett. 14, 548–550 (1993)ADSCrossRef

28.11.

D. Alok, B.J. Baliga, P.K. Mclarty: A simple edge termination for silicon carbide devices with nearly ideal breakdown voltages, IEEE Electron. Dev. Lett. 15, 394–395 (1994)ADSCrossRef

28.12.

R.J. Trew, J.-B. Yan, P.M. Mock: The potential of diamond and SiC electronic devices for microwave and millimeter wave power applications, Proc. IEEE 79(5), 598–620 (1991)ADSCrossRef

28.13.

J.M. McGarrity, F.B. McLean, W.M. DeLancey, J. Palmour, C. Carter, J. Edmond, R.R. Oakley: SiC JFET radiation response, IEEE Trans. Nucl. Sci. 39(6), 1974–1981 (1992)ADSCrossRef

28.14.

See for example, http://www.cree.com/ and http://www.infineon.com/

28.15.

H. Matsunami, T. Kimoto: Step controlled epitaxial growth of SiC: High quality homoepitaxy, Mater. Sci. Eng. R20(3), 125–166 (1997)CrossRef

28.16.

W.J. Choyke, G. Pensl: Physical properties of SiC, MRS Bull. 22(3), 25–29 (1997)CrossRef

28.17.

C.H. Park, B.H. Cheong, K.H. Lee, K.J. Chang: Structural and electronic propertires of cubic, 2H, 4H and 6H SiC, Phys. Rev. B 49(7), 4485–4493 (1994)ADSCrossRef

28.18.

W.S. Yoo, H. Matsunami: Polytype-controlled single crystal growth of silicon carbide using 3C-6H solid state phase transformation, J. Appl. Phys. 70(11), 7124–7131 (1991)ADSCrossRef

28.19.

W.S. Yoo, H. Matsunami: Solid state phase transformation in cubic silicon carbide, Jpn. J. Appl. Phys. Part I (regular papers and short notes) 30, 545–553 (1991)ADSCrossRef

28.20.

A. Itoh, H. Matsunami: Single crystal growth of SiC and electronic devices, Crit. Rev. Solid State Mater. Sci. 22(2), 111–197 (1997)ADSCrossRef

28.21.

P.G. Neudeck: Electrical impact of SiC structural defects on high electric field devices, Mater. Sci. Forum 338–342, 1161–1166 (2000)CrossRef

28.22.

J.A. Powell, H.A. Will: Low temperature solid state phase transformations in 2H SiC, J. Appl. Phys. 43(4), 1400–1408 (1972)ADSCrossRef

28.23.

M. Dudley, X. Huang: Characterization of SiC using synchrotron white beam x-ray topography, Mater. Sci. Forum 338–342, 431–436 (2000)CrossRef

28.24.

I. Kamata, H. Tsuchida, T. Jikimoto, K. Izumi: Structural transformation of screw dislocation via thick 4H-SiC epitaxial growth, Jpn. J. Appl. Phys. 39, 6496–6500 (2000)ADSCrossRef

28.25.

P. Pirouz: On micropipes and nanopipes in SiC and GaN, Philos. Mag. A 78, 727–736 (1998)ADSCrossRef

28.26.

P.G. Neudeck, H. Wei, M. Dudley: Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC pn junction diodes: DC properties, IEEE Trans. Electron. Dev. 46(3), 478–484 (1999)ADSCrossRef

28.27.

U. Zimmermann, A. Hallen, A.O. Konstantinov, B. Breitholtz: Investigation of microplasma breakdown in 4H SiC, Mater. Res. Soc. Symp. Proc. 512, 151–156 (1998)CrossRef

28.28.

A.O. Konstantinov, Q. Wahab, N. Nordell, U. Lindefelt: Study of Avalanche breakdown and impact ionization in 4H SiC, J. Electron. Mater. 27(4), 335–341 (1998)ADSCrossRef

28.29.

P.G. Neudeck, J.A. Powell: Performance limiting micropipe defects in SiC wafers, IEEE Electron. Dev. Lett. 15, 63–65 (1994)ADSCrossRef

28.30.

W. Si, M. Dudley, R. Glass, V. Tsvetkov, C. Carter Jr: Hollow core screw dislocations in 6H-SiC single crystals: A test of Frankʼs theory, J. Electon. Mater. 26, 128–133 (1997)ADSCrossRef

28.31.

W. Si, M. Dudley: Experimental studies of hollow core screw dislocations in 6H- and 4H-SiC single crystals, Mater. Sci. Forum 264–268, 429–432 (1998)CrossRef

28.32.

C.M. Schnabel, M. Tabib-Azar, P.G. Neudeck, S.G. Bailey, H.B. Su, M. Dudle, R.P. Raffaelle: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes, Mater. Sci. Forum 338–342, 489–492 (2000)CrossRef

28.33.

J.A. Powell, D.J. Larkin: Process induced morphological defects in epitaxial CVD silicon carbide, Phys. Status Solidi (b) 202, 529–548 (1997)ADSCrossRef

28.34.

T. Kimoto, N. Miyamoto, H. Matsunami: Performance limiting surface defects in SiC epitaxial pn junction diodes, IEEE Trans. Electron. Dev. 46(3), 471–477 (1999)ADSCrossRef

28.35.

S. Nishino, J.A. Powell, W. Will: Production of large area single crystal of 3C-SiC for semiconductor devices, Appl. Phys. Lett. 42, 460 (1983)ADSCrossRef

28.36.

S. Nishino, K. Matsumoto, Y. Chen, Y. Nishio: Epitaxial growth of 4H-SiC by sublimation close space technique, Mater. Sci. Eng. B 61/62, 121–124 (1999)CrossRef

28.37.

H. Nakazawa, M. Suemitsu, S. Asami: Formation of high quality SiC on Si(001) at 900 °C using monomethylsilane gas source MBE, Mater. Sci. Forum 338–342, 269–272 (2000)CrossRef

28.38.

M.E. Okhuysen, M.S. Mazzola, Y.-H. Lo: Low temperature growth of 3C-SiC on silicon for advanced substrate development, Mater. Sci. Forum 338–342, 305–308 (2000)CrossRef

28.39.

M.-A. Hasan, A. Faik, D. Purser, D. Lieu: Heteroepitaxy of 3C-SiC on Si (100) using porous Si as a compliant seed crystal, Tech. Dig. Int. Conf. SiC Relat. Mater. ICSCRM2001 (Tsukuba 2001) pp. 492–493

28.40.

Y. Ishida, K. Kushibe, T. Takahashi, H. Okumura, S. Yoshida: 3C-SiC homoepitaxial growth by chemical vapor deposition and Schottky barrier junction characteristics, Mater. Sci. Forum 389–393, 275–278 (2002)CrossRef

28.41.

H. Nagasawa, K. Yagi, T. Kawahara: 3C-SiC hetero-eptaxial growth on (001) Si undulant substrates, J. Cryst. Growth 237–239, 1244–1249 (2002)CrossRef

28.42.

H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, G. Pensl, W.J. Choyke, T. Yamada, K.M. Itoh, A. Schoner: Silicon Carbide: Recent Major Advances (Springer, Berlin, Heidelberg 2004) p. 207CrossRef

28.43.

F.R. Chien, S.R. Nutt, J.M. Carulli Jr., N. Bunchan, C.P. Beetz Jr., W.S. Yoo: Heteroepitaxial growth of beta SiC films on TiC substrates: Interface structure and defects, J. Mater. Res. 9(8), 2086–2095 (1994)ADSCrossRef

28.44.

C. Hallin, A.O. Konstantinov, O. Kordina, E. Janzen: Mechanism of cubic SiC nucleation on off-axis substrates, Proc. 6th Int. Conf. SiC Relat. Mater. 1995, Inst. Phys. Conf. Ser. 142, 85–88 (1996)

28.45.

J.A. Powell, D.J. Larkin, P.B. Abel, L. Zhou, P. Pirouz: Effect if tilt angle on the morphology of SIC epitaxial films grown on vicinal (0001) SiC substrates. In: Silicon Carbide and Related Materials, Inst. Phys. Conf. Ser., Vol. 142 (1995) pp. 77–80

28.46.

V.F. Tsvetkov, S.T. Allen, H.S. Kong, C.H. Carter Jr.: Recent progress in SiC crystal growth, Proc. 6th Int. Conf. SiC Relat. Mater. 1995, Inst. Phys. Conf. Ser. 142, 17–22 (1996)

28.47.

D.J. Larkin: An overview of SiC epitaxial growth, MRS Bulletin 22(3), 36–41 (1997)

28.48.

V. Heine, C. Cheng, R.J. Needs: The preference of SiC for growth in the metastable cubic form, J. Am. Ceram. Soc. 74, 2630–2633 (1991)CrossRef

28.49.

K. Wada, T. Kimoto, K. Nishikawa, H. Matsunami: Epitaxial growth of 4H-SiC on 4° off-axis (0001) and (000-1) substrates by hot wall CVD, Mater. Sci. Forum 527–529, 219–222 (2006)CrossRef

28.50.

S. Rendakova, V. Ivantsov, V. Dmitriev: High quality 6H- and 4H-SiC pn structures with stable elelctric breakdown grown by liquid phase epitaxy, Mater. Sci. Forum 264–268, 163–166 (1998)CrossRef

28.51.

D.H. Hofmann, M.H. Muller: Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals, Mater. Sci. Eng. B 61/62, 29–39 (1999)CrossRef

28.52.

R. Yakimova, M. Syväjärvi, S. Redankova, V.A. Dimitriev, A. Henry, E. Janzen: Micropipe healing in liquid phase epitaxial growth of SiC, Mater. Sci. Forum 338–342, 237–240 (2000)CrossRef

28.53.

A. Tanaka, T. Ataka, E. Ohkura, H. Katsuno: Growth modes of silicon carbide in low-temperature liquid phase epitaxy, Jpn. J. Appl. Phys. 43(11A), 7670–7671 (2004)ADSCrossRef

28.54.

O. Filip, B. Epelbaum, M. Bickermann, A. Winnacker: Micropipe healing in SiC wafers by liquid-phase epitaxy in Si–Ge melts, J. Cryst. Growth 271, 142–150 (2004)ADSCrossRef

28.55.

T. Hatayama, S. Nakamura, K. Kurobe, T. Kimoto, T. Fuyuki, H. Matsunami: High-temperature surface structure transitions and growth of alpha-SiC (0001) in ultrahigh vacuum, Mater. Sci. Eng. B 61/62, 135–138 (1999)CrossRef

28.56.

S. Nakamura, T. Hatayama, T. Kimoto, T. Fuyuki, H. Matsunami: Growth of SiC on 6H-SiC 011̄4 substrates by gas source molecular beam epitaxy, Mater. Sci. Forum 338–342, 201–204 (2000)CrossRef

28.57.

T. Sugii, T. Aoyama, T. Ito: Low-temperature growth of beta-SiC on Si by gas-source MBE, J. Electrochem. Soc. 137(3), 989–992 (1990)CrossRef

28.58.

H. Nakazawa, M. Suemitsu, S. Asami: Formation of high quality SiC on Si (001) at 900 °C using monomethylsilane gas-source MBE, Mater. Sci. Forum 338–342, 269–272 (2000)CrossRef

28.59.

C. Hallin, I.G. Ivanov, T. Egillson, A. Henry, O. Kordina, E. Jansen: The material quality of CVD grown SiC using various precursors, J. Cryst. Growth 183, 163 (1998)ADSCrossRef

28.60.

Y. Gao, J.H. Edgar: Selective epitaxial growth of SiC: Thermodyanamic analysis of the Si-C-Cl-H and Si-C-Cl-H-O systems, J. Electrochem. Soc. 144(5), 1875–1880 (1997)CrossRef

28.61.

K. Yagi, H. Nagasawa: 3C-SiC growth by alternate supply of SiH_2Cl_2 and C_2H_2, J. Cryst. Growth 174, 653–657 (1997)ADSCrossRef

28.62.

T. Miyanagi, S. Nishino: Hotwall CVD growth of 4H-SiC using Si2Cl6-C3H8-H2 system, Mater. Sci. Forum 389–393, 199–202 (2002)CrossRef

28.63.

C. Sartel, V. Souliere, Y. Monteil, H. El-Harrouni, J.M. Bluet, G. Guillot: Epitaxial growth of 4H-SiC with hexamethyldisilane, Mater. Sci. Forum 389–393, 263–266 (2002)CrossRef

28.64.

R. Rodriguez-Clemente, A. Figueras, S. Garelik, B. Armas, C. Combescure: Influence of temperature and tetramethylsilane partial pressure on the beta SiC depositin by cold wall chemical vapor deposition, J. Cryst. Growth 125, 532–542 (1992)ADSCrossRef

28.65.

T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki: High purity SiC epitaxial growth by chemical vapor deposition using CH_3SiH_3 and C_3H_3 sources, Mater. Sci. Forum 527–529, 203–206 (2006)CrossRef

28.66.

See for example, http://www.saespuregas.com/

28.67.

H. Matsunami, T. Kimoto: Step controlled epitaxial growth of SiC: High quality homoepitaxy, Mater. Sci. Eng. R20(3), 125–166 (1997)CrossRef

28.68.

S. Nakamura, T. Kimoto, H. Matsunami: Fast growth and doping characteristics of SiC in a horizontal cold wall CVD, Mater. Sci. Forum 389–393, 183–186 (2002)CrossRef

28.69.

R. Rupp, A. Wiedenhofer, P. Friedrichs, D. Peters, R. Schorner, D. Stephani: Growth of SiC epitaxial layers in a vertical cold wall reactor suited for high voltage applications, Mater. Sci. Forum 264–268, 89–96 (1998)CrossRef

28.70.

C. Sartel, J.M. Bluet, V. Souliere, I. EI-Harrouni, Y. Monteil, M. Mermoux, G. Guillot: Characterization of homoepitaxial 4H-SiC layer grown from silane/propane system, Mater. Sci. Forum 433–436, 165–168 (2003)CrossRef

28.71.

B. Thomas, W. Bartsch, R. Stein, R. Schorner, D. Stephani: Properties and suitability of 4H-SiC epitaxial layers grown at different CVD systems for high voltage applications, Mater. Sci. Forum 457–460, 181–184 (2004)CrossRef

28.72.

O. Kordina, C. Hallin, A. Henry, J.P. Bergman, I. Ivanov, A. Ellison, N.T. Son, E. Janzen: Growth of SiC by hot-wall, CVD and HTCVD, Phys. Status Solidi (b) 202, 321–334 (1996)ADSCrossRef

28.73.

T. Kimoto, S. Nakazawa, K. Fujihira, T. Hirao, S. Nakamura, Y. Chen, H. Matsunami: Recent achievement and future challenges in SiC homoepitaxial growth, Mater. Sci. Forum 389–393, 165–170 (2002)CrossRef

28.74.

A. Shoner, A. Konstantinov, S. Karlsson, R. Berge: Highly uniform epitaxial SiC-layer growth in a hot wall CVD reactor with mechanical rotation, Mater. Sci. Forum 389–393, 187–190 (2002)CrossRef

28.75.

B. Thomas, C. Hecht: Epitaxial growth of n-type 4H-SiC on 3, wafers for power devices, Mater. Sci. Forum 483–485, 141–146 (2005)CrossRef

28.76.

A. Ellison, J. Zhang, J. Peterson, A. Henry, Q. Wahab, J.P. Bergman, Y.N. Makarov, A. Vorobʼev, A. Vehanen, E. Janzen: High temperature CVD growth of SiC, Mater. Sci. Eng. B 61/62, 113–120 (1999)CrossRef

28.77.

H. Fujiwara, K. Danno, T. Kimoto, T. Tojo, H. Matsunami: Fast epitaixal growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor depositon, Mater. Sci. Forum 457–460, 205–208 (2004)CrossRef

28.78.

E. Janzén, J.P. Bergman, Ö. Danielsson, U. Forsberg, C. Hallin, J. ul Hassan, A. Henry, I.G. Ivanov, A. Kakanakova-Georgieva, P. Persson, Q. ul Wahab: SiC and III-nitride growth in a hot-wall CVD reactor, Mater. Sci. Forum 483–485, 61–66 (2005)CrossRef

28.79.

K. Danno, T. Kimoto, K. Asano, Y. Sugawara, H. Matsunami: Fast epitaxial growth of high-purity 4H-SiC(0001) in a vertical hot-wall chemical vapor deposition, J. Electron. Mater. 34(4), 324–329 (2005)ADSCrossRef

28.80.

H. Fujiwara, T. Kimoto, T. Tojo, H. Matsunami: Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes, Mater. Sci. Forum 483–485, 151–154 (2005)CrossRef

28.81.

I. Bhat, Canhua Li: High growth rate epitaxy of SiC in a vertical hotwall reactor, unpublished

28.82.

M. Syvajarvi, R. Yakimova, H. Jacobsson, M.K. Linnarsson, A. Henry, E. Janzén: High growth rate epitaxy of thick 4H-SiC layers, Mater. Sci. Forum 338–342, 165–168 (2000)CrossRef

28.83.

T. Furusho, T. Miyanagi, Y. Okui, S. Ohshima, S. Nishino: Homoepitaxial growth of cubic silicon carbide by sublimation epitaxy, Mater. Sci. Forum 389–393, 279–282 (2002)CrossRef

28.84.

E.O. Sveinbjornsson, H.O. Olafsson, G. Gudjonsson, F. Allerstam, P.A. Nilsson, M. Syvajarvi, R. Yakimova, C. Hallin, T. Rodle, R. Jos: High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material, Mater. Sci. Forum 483–485, 841–844 (2005)CrossRef

28.85.

D. Ziane, J.M. Bluet, G. Guillot, P. Godignon, J. Monserrat, R. Ciechonski, M. Syvajarvi, R. Yakimova, L. Chen, P. Mawby: Characterizations of SiC/SiO_2 interface quality toward high power MOSFETs realization, Mater. Sci. Forum 457–460, 1281–1286 (2004)CrossRef

28.86.

R.C. Glass, P. Lu, J.H. Edgar, O.J. Glembocki, P.B. Klein, E.R. Glaser, J. Perrin, J. Chaudhuri: High-speed homoepitaxy of SiC from methyltrichloro-silane by CVD, Int. Conf. Silicon Carbide Relat. Mater. (Pittsburgh 2005)

28.87.

R. Myers, O. Kordina, Z. Shishkin, F. Yan, R.P. Devaty, S.E. Saddow: Effects of HCl addictive on the growth rate of 4H-SiC in a hot wall CVD reactor, Int. Conf. Silicon Carbide Relat. Mater. (Pittsburgh 2005)

28.88.

A. Veneroni, F. Omarini, M. Masi: Silicon carbide growth mechanisms from SiH_4, SiHCl_3 and nC_3H_8, Cryst. Growth Technol. 40(10/11), 967–971 (2005)CrossRef

28.89.

G. Pensl, W.J. Choyke: Electrical and optical characterization of SiC, Physica B 185, 264–283 (1993)ADSCrossRef

28.90.

R. Wang, I. Bhat, unpublished results

28.91.

D.J. Larkin: SiC dopant incorporation control by site competetion CVD, Phys. Status Solidi (b) 202, 305–320 (1997)ADSCrossRef

28.92.

T. Troffer, C. Peppermuller, G. Pensi, K. Rottner, A. Schoner: Phosphorus-related donors in 6H-SiC generated by ion implantation, J. Appl. Phys. 80(7), 3739–3743 (1996)ADSCrossRef

28.93.

M.A. Capano, J.A. Cooper Jr., M.R. Melloch, A. Saxler, W.C. Mitchel: Ionization energies and electron mobililties in phosphorous and nitrogen implanted SiC, J. Appl. Phys. 87(12), 8773–8777 (2000)ADSCrossRef

28.94.

S. Rao, T.P. Chow, I. Bhat: Dependence of the ionization energy of phosphorous donor in 4H-SiC on doping concentration, Mater. Sci. Forum 527–529, 597–600 (2006)CrossRef

28.95.

R. Wang: SiC epitaxial growth for power device applications. Ph.D. Thesis (Rensselaer Polytechnic Institute, Troy 2002)

28.96.

M.H. Anikin, A.A. Lebedev, A.L. Syrkin, A.V. Suvorov: Investigation of deep levels in SiC by capacitance spectroscopy methods, Sov. Phys. Semicond. 19, 69–71 (1985)

28.97.

W. Suttrop, G. Pensi, P. Lanig: Boron related deep centers in SiC, Appl. Phys. A 51, 231–237 (1990)ADSCrossRef

28.98.

A. Golz, G. Horstmann, E. Stein von Kamienski, H. Kurz: Oxidation kinetics of 3C, 4H and 6H silicon carbide, Proc. Sixth Int. Conf. Silicon Carbide Relat. Mater. (1996) pp. 633–636

28.99.

K. Wada, T. Kimoto, K. Nishikawa, H. Matsunami: Improved surface morphology and background doping concentration in 4H-SiC (0001̄) epitaxial growth by hot-wall CVD, Mater. Sci. Forum 483–485, 85–88 (2005)CrossRef

28.100.

T. Yamamoto, T. Kimoto, H. Matsunami: Impurity incorporation mechanism in step-controlled epitaxy growth temperature and substrate off-angle dependence, Mater. Sci. Forum 264–268, 111–116 (1998)CrossRef

28.101.

U. Forsberg, Ö. Danielsson, A. Henry, M.K. Linnarsson, E. Janzén: Nitrogen doping of epitaxial silicon carbide, J. Cryst. Growth 236(1–3), 101–112 (2002)ADSCrossRef

28.102.

U. Forsberg, Ö. Danielsson, A. Henry, M.K. Linnarsson, E. Janzén: Aluminium doping of epitaxial silicon carbide, J. Cryst. Growth 253(1–4), 340–350 (2003)ADSCrossRef

28.103.

T. Kimoto, T. Yamamoto, Z.Y. Chen, H. Matsunami: 4H-SiC (112̄0) epitaxial growth, Mater. Sci. Forum 338–342, 189–192 (2000)CrossRef

28.104.

T. Kimoto, K. Hashimoto, K. Fujihira, K. Danno, S. Nakamura, Y. Negoro, H. Matsunami: Epitaxial growth and characterization of 4H-SiC(112̄0) and (033̄8), Mater. Res. Soc. Symp. Proc. 742, 3–13 (2003)

28.105.

Z. Zhang, Y. Gao, A.C. Arjunan, E.Y. Toupitsyn, P. Sadagopan, R. Kennedy, T.S. Sudarshan: CVD growth and characterization of 4H-SiC epitaxial film on (112̄0) as-cut substrates, Mater. Sci. Forum 483–485, 113–116 (2005)CrossRef

28.106.

K. Nakayama, Y. Miyanagi, H. Shiomi, S. Nishino, T. Kimoto, H. Matsunami: The development of 4H-SiC 033̄8 wafers, Mater. Sci. Forum 389–393, 123–127 (2002)CrossRef

28.107.

T. Kimoto, K. Danno, K. Fujihira, H. Shiomi, H. Matsunami: Complete micropipe dissociation in 4H-SiC (03-38) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes, Mater. Sci. Forum 433–436, 197–200 (2003)CrossRef

28.108.

T. Kimoto, K. Danno, K. Fujihira, H. Shiomi, H. Matsunami: SiC epitaxy on non-standard surfaces, Mater. Sci. Forum 433–436, 125–130 (2003)

28.109.

E. Arnold, D. Alok: Effect of interface states on electron transport in 4H–SiC inversion layers, IEEE Trans. Electron. Dev. 48, 1870–1877 (2001)ADSCrossRef

28.110.

T. Kimoto, Y. Kanzaki, M. Noborio, H. Kawano, H. Matsunami: Interface properties of metal–oxide–semiconductor structures on 4H-SiC {0001} and (112̄0) formed by N_2O oxidation, Jpn. J. Appl. Phys. 44(3), 1213–1218 (2005)ADSCrossRef

28.111.

K. Fukuda, J. Senzaki, K. Kojima, T. Suzuki: High inversion channel mobility of MOSFET fabricated on 4H-SiC C(0001̄) face using H_2 post-oxidation annealing, Mater. Sci. Forum 433–436, 567–570 (2003)CrossRef

28.112.

T. Kimoto, H. Kawano, J. Suda: 1200V-class 4H-SiC RESURF MOSFETs with low on-resistances, Proc. 17th Int. Symp. Power Semicond. Devices ICʼs (2005) pp. 159–162

28.113.

N. Nordell, S. Karlsson, A.O. Kenstantinov: Growth of 4H and 6H SiC in trenches and around stripe mesas, Mater. Sci. Forum 264–268, 131–134 (1998)CrossRef

28.114.

Y. Chen, T. Kimoto, Y. Takeuchi, R.K. Malhan, H. Matsunami: Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition, Jpn. J. Appl. Phys. 43(7A), 4105–4109 (2004)ADSCrossRef

28.115.

P.G. Neudeck, J.A. Powell, G.M. Beheim, E.L. Benavage, P.B. Abel, A.J. Trunek, D.J. Spry, M. Dudley, W.M. Vetter: Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers, J. Appl. Phys. 92, 2391–2400 (2002)ADSCrossRef

28.116.

P.G. Neudeck, A.J. Trunek, D.J. Spry, J.A. Powell, H. Du, M. Skowronski, N.D. Bassim, M.A. Mastro, M.E. Twigg, R.T. Holm, R.L. Henry, C.R. Eddy Jr.: Recent results from epitaxial growth on step free 4H-SiC mesas, Mater. Res. Soc. Symp. Proc. 911, B08–03 (2006)CrossRef

28.117.

P.G. Neudeck, A.J. Powell: Homoepitaxial and heteroepitaxial growth on step-free SiC mesas. In: Silicon Carbide: Recent Major Advances, ed. by W.J. Choyke, H. Matsunami, G. Pensi (Springer, New York 2003) p. 179

28.118.

N.D. Bassima, M.E. Twigg, M.A. Mastro, C.R. Eddy Jr., T.J. Zega, R.L. Henry, J.C. Culbertson, R.T. Holm, P. Neudeck, J.A. Powell, A.J. Trunek: Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps, J. Cryst. Growth 304, 103–107 (2007)ADSCrossRef

28.119.

M.R. Goulding: Selective epitaxial growth of silicon, Mater. Sci. Eng. B 17(1–3), 47–67 (1993)CrossRef

28.120.

D. Kapolnek, S. Keller, R. Vetury, R.D. Underwood, P. Kozodoy, S.P. Den Baars, U.K. Mishra: Anisotropic epitaxial lateral growth in GaN selective area epitaxy, Appl. Phys. Lett. 71(9), 1204–1206 (1997)ADSCrossRef

28.121.

O. Nam, T.S. Zheleva, M.D. Bremser, R.F. Davis: Lateral epitaxial overgrowth of GaN films on SiO_2 areas via metalorganic vapor phase epitaxy, J. Electron. Mater. 27(4), 233–237 (1998)ADSCrossRef

28.122.

Y. Ohshita: Low temperature and selective growth of β-SiC using the SiH_2Cl_2/i-C_4H_10/HCl/H_2, Appl. Phys. Lett. 57(6), 605–607 (1990)ADSCrossRef

28.123.

J.H. Edgar, Y. Gao, J. Chaudhuri, S. Cheema, P.W. Yip, M.V. Sidorov: Selective epitaxial growth of silicon carbide on SiO_2 masked Si(100): The effects of temperature, J. Appl. Phys. 84(1), 201–204 (1998)ADSCrossRef

28.124.

K. Teker: Selective epitaxial growth of 3C-SiC on patterned Si using hexamethyldisilane by APCVD, J. Cryst. Growth 257(3/4), 245–254 (2003)ADSCrossRef

28.125.

S. Nishino, C. Jacob, Y. Okui, S. Ohshima, Y. Masuda: Lateral over-growth of 3C-SiC on patterned Si(111) substrates, J. Cryst. Growth 237–239(2), 1250–1253 (2002)CrossRef

28.126.

A.R. Bushroa, C. Jacob, H. Saijo, S. Nishino: Lateral epitaxial overgrowth and reduction in defect density of 3C-SiC on patterned Si substrates, J. Cryst. Growth 271(1/2), 200–206 (2004)ADSCrossRef

28.127.

E. Eshun, C. Taylor, M.G. Spencer, K. Kornegay, I. Ferguson, A. Gurray, R. Stall: Homoepitaxial and selective area growth of 4H and 6H silicon carbide using a resistively heated vertical reactor, Mater. Res. Soc. Symp. 572, 173–178 (1999)CrossRef

28.128.

Y. Chen, T. Kimoto, Y. Takeuchi, H. Matsunami: Homoepitaxial mesa structures on 4H-SiC (0001) and (112̄0) substrates by chemical vapor deposition, J. Cryst. Growth, 254, 115–122 (2003)ADSCrossRef

28.129.

Y. Khlebnikov, I. Khlebnikov, M. Parker, T.S. Sudarshan: Local epitaxy and lateral epitaxial overgrowth of SiC, J. Cryst. Growth 233, 112–120 (2001)ADSCrossRef

28.130.

R. Zhang, I. Bhat: Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth, J. Electron. Mater. 30(11), 1370–1375 (2001)ADSCrossRef

28.131.

B.A. Haskell, T.J. Baker, M.B. McLaurin, F. Wu, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura: Defect reduction in m-plane gallium nitride via lateral epitaxial overgrowth by hydride phase epitaxy, Appl. Phys. Lett. 86(11), 111917–1–111917–3 (2005)ADSCrossRef

28.132.

A.A. Burk Jr., M.J. OʼLoughlin, H.D. Nordby Jr.: SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactor, J. Cryst. Growth 200, 458–466 (1999)ADSCrossRef

28.133.

L.B. Rowland, G.T. Dunne, J.A. Freitas Jr.: Initial results on thick 4H-SiC epitaxial layers grown using vapor phase epitaxy, Mater. Sci. Forum 338–342, 161–164 (2000)CrossRef

28.134.

G.R. Gruzalski, D.M. Zehner: Defect states in substoichiometric tantalum carbide, Phys. Rev. B 34(6), 3841–3848 (1986)ADSCrossRef

28.135.

A.K. Dua, V.C. George: TaC coatings prepared by hot filament chemical vapour deposition: Characterization and properties, Thin Solid Films 247, 34–38 (1994)ADSCrossRef

28.136.

Y. Chen, T. Kimoto, Y. Takeuchi, H. Matsunami: Selective homoepitaxy of 4H-SiC on (0001) and (112̄0) masked substrates, J. Cryst. Growth 237–239, 1224–1229 (2002)CrossRef

28.137.

Y. Fukai: The Metal-Hydrogen System, 2nd edn. (Springer, Berlin, Heidelberg 2005)

Titel: Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition
verfasst von: Ishwara B. Bhat
Verlag: Springer Berlin Heidelberg
Buch: Springer Handbook of Crystal Growth
Print ISBN: 978-3-540-74182-4

Electronic ISBN: 978-3-540-74761-1

Copyright-Jahr: 2010
DOI: https://doi.org/10.1007/978-3-540-74761-1_28

Premium Partner

Marktübersichten

Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.

Zur Marktübersicht