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Erschienen in:
11.09.2015
Fabrication and characterization of AlN/PTFE composites with low dielectric constant and high thermal stability for electronic packaging
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2016
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Abstract
In this work, PTFE composites filled with Aluminum Nitride (AlN) were prepared by powder processing technique. The microstructure of AlN particles and the composites were investigated by scanning electron microscopic method. The effect of different weight fraction of AlN (0–0.6) on the dielectric, thermal, mechanical properties of the composites was investigated. All composites exhibited excellent thermal stability endowed by PTFE matrix. The dielectric constant and dielectric loss of the sample with 50 wt% of AlN filler was 4.2 and 0.006, at 1 MHz. The dielectric constant of the composites showed only a very small variation with frequency in the range 100–1 MHz. Several theoretical models were used to compare with experimental data of the dielectric constant of the composites. EMT model showed the best correlation with the experimental results.