Fabrication and study of optical properties on CdS semiconductor as buffer layer for Cu(In,Ga)Se₂ thin film solar cells

CdS nanostructures have been fabricated using cadmium acetate dihydrate and Cd(II)-Salophen as precursors via different chemical methods such as chemical bath deposition and electrodeposition. Electrochemical deposition experiments were performed by means of potentiostatic method. The effects of the precursor type, deposition time and method on the structural, morphological, chemical composition and optical properties of these films were investigated. The thin films are characterized by X-ray diffraction pattern, scanning electron microscopy, transmission electron microscopy, UV–Vis diffuse reflectance spectroscopy and energy dispersive X-ray analysis spectroscopy. Current density–voltage (J–V) curve was used to investigation of CIGS solar cells made by electrodeposition method. To the best our knowledge, this is the first report on the synthesis of CdS nanostructures by Cd(II)-Salophen as an inorganic precursor for application in CIGS solar cells. It was found that electrodeposition method is the best technique for deposition of CdS on the FTO surface for using in CIGS solar cell. The highest efficiency obtained for n-CdS/p-CIGS solar cells was 0.01% (FF = 27%) with a synthesized CdS layer using Cd(II)-Salophen as a new precursor.