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Microsystem Technologies
Erschienen in: Microsystem Technologies 8/2019

22.10.2018 | Technical Paper

Fabrication of comb structure with vertical sidewalls in Si (110) substrate by wet etching in boiling KOH solution

verfasst von: Shankar Dutta, Nidhi Gupta, Isha Yadav, Ramjay Pal, K. K. Jain, Dilip K. Bhattacharya, Ratnamala Chatterjee

Erschienen in: Microsystem Technologies | Ausgabe 8/2019

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Abstract

This paper discusses about the fabrication of comb-structure with vertical sidewall profile by wet chemical etching of Si (110) substrate in boiling KOH solution. Etch rate of the Si (110) substrate in boiling KOH solution is 9 times higher with a 40X reduction of average surface roughness than the etch rate at 75 °C. An etch selectivity of 48:1 for the (110) over (111) plane is observed in the boiling KOH solution (35 wt%). A rhombus shaped comb-finger mask is used to fabricate the comb-structure. Each comb finger has the dimension of length: 500 µm and width: 8 µm with inter-comb spacing of 5 µm. Finally, suspended comb-type MEMS structure is realized by using the dissolved wafer process technique.
Vorheriger Artikel Stacking of nanocrystalline graphene for nano-electro-mechanical (NEM) actuator applications
Nächster Artikel Model and experiment of scale factor acceleration sensitivity of MEMS gyroscope in high acceleration environment

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Metadaten
Titel
Fabrication of comb structure with vertical sidewalls in Si (110) substrate by wet etching in boiling KOH solution
verfasst von
Shankar Dutta
Nidhi Gupta
Isha Yadav
Ramjay Pal
K. K. Jain
Dilip K. Bhattacharya
Ratnamala Chatterjee
Publikationsdatum
22.10.2018
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 8/2019
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-018-4195-5

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