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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2019

30.10.2018

Fast and accurate PV model for SPICE simulation

verfasst von: Hamdy Abdelhamid, Ahmed Edris, Amr Helmy, Yehea Ismail

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2019

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Abstract

This paper presents a complete model for photovoltaic modules able to accurately predict the I–V characteristics at different levels of temperature and irradiance. The model greatly reduces the computational effort needed to extract the five parameters of the one-diode model by applying five boundary conditions based on data provided by the manufacturer only. The model equations are reduced to only two simultaneous equations of two unknowns (series resistance, \(R_\mathrm{s}\), and shunt resistance, \(R_\mathrm{sh}\)), which converge in five iterations on average. The model parameters are extrapolated to account for temperature and irradiance variations. The model is matched very well with the experimental data obtained from different commercial PV modules. The proposed I–V model has least root mean square error of (0.0031) compared to other works. The model is implemented in Verilog-A to be used inside SPICE simulators. The model in Verilog-A is integrated in Cadence-SPECTRE circuit simulator and tested with a boost converter.
Vorheriger Artikel Theoretical study of optical absorption in nonpolar AlGaN/GaN step quantum well structures
Nächster Artikel Numerical investigation of an all-optical logic OR gate at 80 Gb/s with a dual pump–probe semiconductor optical amplifier (SOA)-assisted Mach–Zehnder interferometer (MZI)

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Metadaten
Titel
Fast and accurate PV model for SPICE simulation
verfasst von
Hamdy Abdelhamid
Ahmed Edris
Amr Helmy
Yehea Ismail
Publikationsdatum
30.10.2018
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2019
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-018-1266-x

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