Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Bücher
Zeitschriften
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
SLX-Digitalkonferenz: Zukunftswerkstatt 2024

Mehr Umsatz mit Top-Kontakten

Am 7. Mai erfahren Sie, wie Vertriebsteams Leadgenerierung, Leadnurturing und Leadstrategien effizient steuern können.
Erweiterte Suche
Anmelden
nach oben
Journal of Materials Science
Erschienen in: Journal of Materials Science 20/2018

10.07.2018 | Electronic materials

Field effect properties of single-layer MoS2(1−x)Se2x nanosheets produced by a one-step CVD process

verfasst von: Dengxuan Tang, Fang Wang, Baijun Zhang, Yi Li, Yue Li, Yulin Feng, Yemei Han, Jun Ma, Tianling Ren, Kailiang Zhang

Erschienen in: Journal of Materials Science | Ausgabe 20/2018

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

In recent years, interfacial doping with other atoms, molecules, and nanoparticles in molybdenum disulfide (MoS2) has been proven as a new route to explore the potential application of 2D materials in microelectronical devices. In this paper, we utilized a one-step chemical vapor deposition approach to synthesize monolayer MoS2(1−x)Se2x nanosheets in atmospheric pressure using MoO3, S, and Se powders as precursors. AFM and visible-light microscopy showed that the as-grown nanosheets were single layers, their surface was atomic flat, and the maximum grain size was over 100 μm. XPS characterization demonstrated that the concentration of selenium in MoS2(1−x)Se2x nanosheets was affected by the amount of selenium powder in the doping process. The back-gate FETs were fabricated to investigate the electrical properties of monolayer MoS2(1−x)Se2x nanosheets with different Se contents. The field effect properties of MoS2(1−x)Se2x (x = 0.65) transistors indicated that a moderate mobility was achieved, and ohmic contact was obtained at the interface of the MoS2(1−x)Se2x channel and metal electrodes. Characterization using high-resolution transmission electron microscopy showed that the microstructure of as-grown MoS2(1−x)Se2x (x = 0.65) had a regular hexagonal lattice structure, which revealed that it was a single-crystalline two-dimensional material.
Vorheriger Artikel Adsorption of residual gas molecules on (10–10) surfaces of pristine and Zn-doped GaAs nanowires
Nächster Artikel Influence of solvents on the plasmonic properties of indium-doped zinc oxide nanocrystals

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren
Anhänge
Nur mit Berechtigung zugänglich
Literatur
1.
Zheng B, Wang Z, Qi F et al (2017) CVD growth of large-area and high-quality HfS2 nanoforest on diverse substrates. Appl Surf Sci 435:563–567CrossRef
2.
Hu P, Wang L, Yoon M et al (2013) Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. Nano Lett 13:1649–1654CrossRef
3.
Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS2 transistors. Nat Nanotechnol 6:147–150CrossRef
4.
Cain JD, Shi F, Wu J, Dravid VP (2016) Growth mechanism of transition metal dichalcogenide monolayers: the role of self-seeding fullerene nuclei. ACS Nano 10:5440CrossRef
5.
Ling X, Lee Y, Lin Y, Fang W, Yu L, Dresselhaus M, Kong J (2014) Role of the seeding promoter in MoS2 growth by chemical vapor deposition. Nano Lett 14:464–472CrossRef
6.
Antonelou A, Sygellou GL, Leftheriotis G, Dracopoulos V, Yannopoulos SN (2016) Facile, substrate-scale growth of mono- and few-layer homogeneous MoS2 films on Mo foils with enhanced catalytic activity as counter electrodes in DSSCs. Nanotechnology 27:045404CrossRef
7.
Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M (2011) Photoluminescence from chemically exfoliated MoS2. Nano Lett 11:5111CrossRef
8.
Feng Y, Zhang K, Wang F et al (2015) Synthesis of large-area highly crystalline monolayer molybdenum disulfide with tunable grain size in a H2 atmosphere. ACS Appl Mater Inter 7:22587–22593CrossRef
9.
Desai SB, Madhvapathy SR, Sachid AB et al (2016) MoS2 transistors with 1-nanometer gate lengths. Science 354:99–102CrossRef
10.
Radisavljevic B, Whitwick MB, Kis A (2012) Small-signal amplifier based on single-layer MoS2. Appl Phys Lett 101:66CrossRef
11.
Tsai DS, Liu KK, Lien DH et al (2013) Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments. ACS Nano 7:3905–3911CrossRef
12.
Chen X, Yang H, Liu G et al (2018) Hollow spherical nanoshell arrays of 2D layered semiconductor for high-performance photodetector device. Adv Funct Mater 28:1705153CrossRef
13.
Chhetri M, Gupta U, Yadgarov L, Rosentsveig R, Tennec R, Rao CNR (2015) Beneficial effect of Re doping on the electrochemical HER activity of MoS2 fullerenes. Dalton Trans 44:16399CrossRef
14.
Cao X, Shi Y, Shi W, Rui X, Yan Q, Kong J, Zhang H (2013) Preparation of MoS2-coated three-dimensional graphene networks for high-performance anode material in lithium-ion batteries. Small 9:3433–3438CrossRef
15.
Wang Z, Li Q, Xu H et al (2018) Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites. Nano Energy 49:634–643CrossRef
16.
Du Y, Liu H, Neal AT, Si M, Ye PD (2013) Molecular doping of multilayer MoS2 field-effect transistors: reduction in sheet and contact resistances. IEEE Electron Device Lett 34:1328–1330CrossRef
17.
Fang H, Tosun M, Seol G, Chang TC, Takei K, Guo J, Javey A (2013) Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. Nano Lett 13:1991–1995CrossRef
18.
Eshun K, Xiong HD, Yu S, Li Q (2015) Doping induces large variation in the electrical properties of MoS2 monolayers. Solid State Electron 106:44–49CrossRef
19.
Dolui K, Rungger I, Pemmaraju CD, Sanvito S (2013) Possible doping strategies for MoS2 monolayers: an ab initio study. Phys Rev B 88:4192–4198CrossRef
20.
Feng Q, Zhu Y, Hong J et al (2014) Growth of large-area 2D MoS2(1−x)Se2x semiconductor alloys. Adv Mater 26:2648–2653CrossRef
21.
Zhang W, Li X, Jiang T, Song J, Lin Y, Zhu L, Xu X (2015) CVD synthesis of Mo(1−x)WxS2 and MoS2(1−x)Se2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide. Nanoscale 7:13554–13560CrossRef
22.
Mann J, Ma Q, Odenthal PM et al (2014) 2-Dimensional transition metal dichalcogenides with tunable direct band gaps: MoS2(1–x)Se2x monolayers. Adv Mater 26:1399–1404CrossRef
23.
Li H, Zhang Q, Duan X et al (2015) Lateral growth of composition graded atomic layer MoS2(1−x)Se2x nanosheets. J Am Chem Soc 137:5284–5287CrossRef
24.
Lu X, Utama MIB, Lin J et al (2014) Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates. Nano Lett 14:2419CrossRef
25.
Li Y, Zhang K, Wang F, Feng Y, Li Y, Han Y, Tang D, Zhang B (2017) Scalable synthesis of highly crystalline MoSe2 and its ambipolar behavior. ACS Appl Mater Inter 9:36009–36016CrossRef
26.
Huang JK, Pu J, Hsu CL et al (2014) Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS Nano 8:923–930CrossRef
27.
Feng Q, Mao N, Wu J, Xu H, Wang C, Zhang J, Xie L (2015) Growth of MoS2(1−x)Se2x (x = 0.41–1.00) monolayer alloys with controlled morphology by physical vapor deposition. ACS Nano 9:7450–7455CrossRef
28.
Kiran V, Mukherjee D, Jenjeti RN, Sampath S (2014) Active guests in the MoS2/MoSe2 host lattice: efficient hydrogen evolution using few-layer alloys of MoS2(1-x)Se2x. Nanoscale 6:12856–12863CrossRef
29.
Zheng B, Chen Y, Qi F et al (2017) 3D-hierarchical MoSe2 nanoarchitecture as a highly efficient electrocatalyst for hydrogen evolution. 2D Mater 4:025092CrossRef
30.
Gong Q, Cheng L, Liu C et al (2015) Ultrathin MoS2(1−x)Se2x alloy nanoflakes for electrocatalytic hydrogen evolution reaction. ACS Catal 5:2213–2219CrossRef
31.
Das S, Chen HY, Penumatcha AV, Appenzeller J (2012) High performance multilayer MoS2 transistors with scandium contacts. Nano Lett 13:100–105CrossRef
32.
Susarla S, Kutana A, Hachtel JA et al (2017) Quaternary 2D transition metal dichalcogenides (TMDs) with tunable bandgap. Adv Mater 29:1702457CrossRef
33.
Feng W, Zheng W, Cao W, Hu P (2014) Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface. Adv Mater 26:6587–6593CrossRef
34.
Chuang HJ, Chamlagain B, Koehler M et al (2016) Low-resistance 2D/2D ohmic contacts: a universal approach to high-performance WSe2, MoS2, and MoSe2 transistors. Nano Lett 16:1896CrossRef
35.
Li H, Duan X, Wu X et al (2014) Growth of alloy MoS2xSe2(1−x) nanosheets with fully tunable chemical compositions and optical properties. J Am Chem Soc 136:3756–3759CrossRef
36.
Dai T, Fan X, Ren Y et al (2018) Layer-controlled synthesis of wafer-scale MoSe2 nanosheets for photodetector arrays. J Mater Sci 53:8436–8444CrossRef
37.
Li Y, Wang F, Tang D et al (2018) Controlled synthesis of highly crystalline CVD-derived monolayer MoSe2 and shape evolution mechanism. Mater Lett 216:261–264CrossRef
Metadaten
Titel
Field effect properties of single-layer MoS2(1−x)Se2x nanosheets produced by a one-step CVD process
verfasst von
Dengxuan Tang
Fang Wang
Baijun Zhang
Yi Li
Yue Li
Yulin Feng
Yemei Han
Jun Ma
Tianling Ren
Kailiang Zhang
Publikationsdatum
10.07.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 20/2018
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-018-2617-5

Weitere Artikel der Ausgabe 20/2018

Journal of Materials Science 20/2018 Zur Ausgabe

Ceramics

Enhancing electrical stability for flexible ZnO nanowire UV sensor by textured substrates

Composites

Crystallization behaviors and properties of poly (arylene ether nitrile) nanocomposites induced by aluminum oxide and multi-walled carbon nanotubes

Composites

Preparation of light-sensitive polymer/graphene composite via molecular recognition by β-cyclodextrin

Biomaterials

Effects of scandium addition on the in vitro degradation behavior of biodegradable Mg–1.5Zn–0.6Zr alloy

Metals

Quasi-static and shock-wave loading of ultrafine-grained aluminum: effect of microstructural characteristics

Energy materials

Wearable supercapacitors based on conductive cotton yarns

Premium Partner

    Marktübersichten

    Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen. 

    Zur Marktübersicht
    Bildnachweise