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Erschienen in:
2008 | OriginalPaper | Buchkapitel
Field Effect Transistor
verfasst von : Dr.-Ing. Ulrich Tietze, Dr.-Ing. Christoph Schenk, Dr.-Ing. Eberhard Gamm
Erschienen in: Electronic Circuits
Verlag: Springer Berlin Heidelberg
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The field effect transistor (FET) is a semiconductor component with three terminals, known as the gate (G), source (S) and drain (D). There are discrete transistors that are used for mounting on printed circuit boards, and are contained in their own housings, and integrated field effect transistors that are produced together with other semiconductor elements on a common substrate. Integrated field effect transistors feature a fourth terminal called the substrate or bulk (B), which results from the common substrate.1 This terminal also exists internally in discrete transistors, where it is not connected to the outside but to the source terminal.