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Journal of Nanoparticle Research
Erschienen in: Journal of Nanoparticle Research 4/2015

01.04.2015 | Research Paper

Field emission current from a junction field-effect transistor

verfasst von: Mahta Monshipouri, Yaser Abdi

Erschienen in: Journal of Nanoparticle Research | Ausgabe 4/2015

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Abstract

Fabrication of a titanium dioxide/carbon nanotube (TiO2/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO2/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO2/CNT hetero-structure is also investigated, and well modeled.
Vorheriger Artikel The biological properties of the silver- and copper-doped ceramic biomaterial
Nächster Artikel Toxicity of silver nanoparticles against bacteria, yeast, and algae

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Metadaten
Titel
Field emission current from a junction field-effect transistor
verfasst von
Mahta Monshipouri
Yaser Abdi
Publikationsdatum
01.04.2015
Verlag
Springer Netherlands
Erschienen in
Journal of Nanoparticle Research / Ausgabe 4/2015
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-015-2974-9

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