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2007 | OriginalPaper | Buchkapitel

First-Principles Investigation on Oxide Trapping

verfasst von: W. Gös, T. Grasser

Erschienen in: Simulation of Semiconductor Processes and Devices 2007

Verlag: Springer Vienna

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We conduct a thorough investigation of the tunneling dynamics of oxide traps in a-SiO

2

, in particular of the E

δ

center, the E

γ

center, their hydrogenated counterparts, and the H atom. Based on these findings their behavior in the context of tunneling can be deduced. It is found that an E

γ

center can exchange electrons with the Si bulk. The E

δ

center shows two distinct behaviors induced by a spread in its tunneling levels. The H atom is not affected by the presence of an interface, whereas a H bridge may occur in every charge state.

Metadaten
Titel
First-Principles Investigation on Oxide Trapping
verfasst von
W. Gös
T. Grasser
Copyright-Jahr
2007
Verlag
Springer Vienna
DOI
https://doi.org/10.1007/978-3-211-72861-1_38