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Erschienen in:
2007 | OriginalPaper | Buchkapitel
First-Principles Investigation on Oxide Trapping
verfasst von : W. Gös, T. Grasser
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
We conduct a thorough investigation of the tunneling dynamics of oxide traps in a-SiO
2
, in particular of the E
δ
′
center, the E
γ
′
center, their hydrogenated counterparts, and the H atom. Based on these findings their behavior in the context of tunneling can be deduced. It is found that an E
γ
′
center can exchange electrons with the Si bulk. The E
δ
′
center shows two distinct behaviors induced by a spread in its tunneling levels. The H atom is not affected by the presence of an interface, whereas a H bridge may occur in every charge state.