Anzeige
Erschienen in:
2007 | OriginalPaper | Buchkapitel
Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors
verfasst von : M. Luisier, A. Schenk, W. Fichtner
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
Source-to-drain tunneling is investigated for Si triple-gate nanowire transistors. The full-band quantum transport problem is solved in an atomistic basis using the nearestneighbor
sp
3
d
5
s*
tight-binding method. It is self-consistently coupled to the threedimensional calculation of the electrostatic potential in the device using the finite element method. This procedure is applied to the computation of
I
d
—
V
gs
transfer characteristics of transistors with different channel orientations such as [100], [110], [111], and [112] for gate lengths ranging from 4 nm to 13 nm. The subthreshold swing
S
is then extracted from the results to determine the scaling limit of nanowire transistors.