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Erschienen in:
Beyond-Silicon Devices: Considerations for Circuits and Architectures Kapitel lesen Erstes Kapitel lesen

2019 | OriginalPaper | Buchkapitel

2. Functionality-Enhanced Devices: From Transistors to Circuit-Level Opportunities

verfasst von : Giovanni V. Resta, Pierre-Emmanuel Gaillardon, Giovanni De Micheli

Erschienen in: Beyond-CMOS Technologies for Next Generation Computer Design

Verlag: Springer International Publishing

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Abstract

Complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have been the fundamental brick for the development of modern micro-electronics since their introduction in the 1970s. Complementary logic gates are based on the use of two kinds of transistors, n- and p-type, having opposite polarity. The fixed polarity of each device is determined during the fabrication process by implantation of dopant atoms, which provide the charge carriers needed for conduction. In contrast to this approach, a new device concept has been introduced, where an intrinsic, non-doped material is used, and additional gate electrodes allow for the selection of the charge carriers. The polarity of the device can thus be dynamically selected at run-time, and other operation modes can be exploited using particular combinations of the gate inputs. This chapter is dedicated to this class of functionality-enhanced devices and covers recent developments in the field, spanning from the basic operation principles of multiple-independent-gate (MIG) FETs to their applications in the creation of highly compact logic gates for beyond-CMOS electronics.

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Vorheriges Kapitel Beyond-Silicon Devices: Considerations for Circuits and Architectures
Nächstes Kapitel Heterogeneous Integration of 2D Materials and Devices on a Si Platform
Fußnoten
1
For example, a state-of-the-art research clean room, such as the one of IMEC research center in Belgium, calls for more than €1 billion investment.
 
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Metadaten
Titel
Functionality-Enhanced Devices: From Transistors to Circuit-Level Opportunities
verfasst von
Giovanni V. Resta
Pierre-Emmanuel Gaillardon
Giovanni De Micheli
Copyright-Jahr
2019
Buch
Beyond-CMOS Technologies for Next Generation Computer Design

Print ISBN: 978-3-319-90384-2

Electronic ISBN: 978-3-319-90385-9

Copyright-Jahr: 2019

DOI
https://doi.org/10.1007/978-3-319-90385-9_2

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