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Erschienen in:
Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics Kapitel lesen Erstes Kapitel lesen

2018 | OriginalPaper | Buchkapitel

7. GaN in AC/DC Power Converters

verfasst von : Fred Wang, Bo Liu

Erschienen in: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Verlag: Springer International Publishing

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Abstract

With low power loss and high switching capability, GaN device technology can benefit power electronics converters in a number of ways. GaN devices can substitute Si devices in a converter for improved efficiency and power density. In addition, GaN devices can simplify the converter topology, leading to lower cost and higher reliability. GaN devices can also introduce system-level benefits as a result of their fast speed and therefore better dynamics. They can also enable new applications. This chapter presents how GaN technology can benefit AC/DC converters, covering both the single-phase and three-phase cases. Associated challenges in using GaN devices and potential solutions are discussed.

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Vorheriges Kapitel Impact of Parasitics on GaN-Based Power Conversion
Nächstes Kapitel GaN in Switched-Mode Power Amplifiers
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Metadaten
Titel
GaN in AC/DC Power Converters
verfasst von
Fred Wang
Bo Liu
Copyright-Jahr
2018
Buch
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Print ISBN: 978-3-319-77993-5

Electronic ISBN: 978-3-319-77994-2

Copyright-Jahr: 2018

DOI
https://doi.org/10.1007/978-3-319-77994-2_7

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