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2019 | OriginalPaper | Buchkapitel

6. GaSbBi Alloys and Heterostructures: Fabrication and Properties

verfasst von : O. Delorme, L. Cerutti, R. Kudrawiec, Esperanza Luna, J. Kopaczek, M. Gladysiewicz, A. Trampert, E. Tournié, J.-B. Rodriguez

Erschienen in: Bismuth-Containing Alloys and Nanostructures

Verlag: Springer Singapore

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Abstract

Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of bandgap reduction and spin–orbit splitting. The incorporation of Bi into antimonide-based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2–5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.

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Metadaten
Titel
GaSbBi Alloys and Heterostructures: Fabrication and Properties
verfasst von
O. Delorme
L. Cerutti
R. Kudrawiec
Esperanza Luna
J. Kopaczek
M. Gladysiewicz
A. Trampert
E. Tournié
J.-B. Rodriguez
Copyright-Jahr
2019
Verlag
Springer Singapore
DOI
https://doi.org/10.1007/978-981-13-8078-5_6

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