Skip to main content

2011 | OriginalPaper | Buchkapitel

4. Gate Level Modeling and Simulation

verfasst von : Nadine Buard, Lorena Anghel

Erschienen in: Soft Errors in Modern Electronic Systems

Verlag: Springer US

Aktivieren Sie unsere intelligente Suche um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

This chapter presents an overview of a methodology for analyzing the behavior of combinational and sequential cells regarding “Single-Event Multiple-Transients” (SEMT) caused by nuclear reactions induced by atmospheric neutrons. The methodology uses a combination of Monte Carlo-based selection of nuclear reactions, simulation of the carriers transport in the device, and SPICE simulation. The effects of nuclear particles on the gates are monitored at the gate output by means of transient duration, amplitude, and associated occurrence probability.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literatur
1.
Zurück zum Zitat A. Taber and E. Normand, “Single event upsets in avionics”, IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1484–1490, 1993.CrossRef A. Taber and E. Normand, “Single event upsets in avionics”, IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1484–1490, 1993.CrossRef
2.
Zurück zum Zitat C. A. Gossett et al., “Single event phenomena in atmospheric neutron environments”, IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1845, 1993.CrossRef C. A. Gossett et al., “Single event phenomena in atmospheric neutron environments”, IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1845, 1993.CrossRef
3.
Zurück zum Zitat J. F. Ziegler and G. R. Srinivasan, “Terrestrial Cosmic Rays and Soft Errors”, IBM: J. Res. Dev., pp. 19–39, January 1996. J. F. Ziegler and G. R. Srinivasan, “Terrestrial Cosmic Rays and Soft Errors”, IBM: J. Res. Dev., pp. 19–39, January 1996.
4.
Zurück zum Zitat E. Normand, “Single event upset at ground level”, IEEE Trans. Nucl. Sci., vol. 43, pp. 2742–2750, 1996.CrossRef E. Normand, “Single event upset at ground level”, IEEE Trans. Nucl. Sci., vol. 43, pp. 2742–2750, 1996.CrossRef
5.
Zurück zum Zitat E. Normand, “Extensions of the burst generation rate method for wider application to proton/neutron induced single event effects”, IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2904–2914, 1998.CrossRef E. Normand, “Extensions of the burst generation rate method for wider application to proton/neutron induced single event effects”, IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2904–2914, 1998.CrossRef
6.
Zurück zum Zitat P. Calvel et al., “An empirical model for predicting proton induced upset”, IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2827, 1996.CrossRef P. Calvel et al., “An empirical model for predicting proton induced upset”, IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2827, 1996.CrossRef
7.
Zurück zum Zitat L. D. Edmonds, “Proton SEU cross sections derived from heavy ion test data”, IEEE Trans. Nucl. Sci., vol. 47, no. 5, pp. 1713–1728, 2000.CrossRef L. D. Edmonds, “Proton SEU cross sections derived from heavy ion test data”, IEEE Trans. Nucl. Sci., vol. 47, no. 5, pp. 1713–1728, 2000.CrossRef
8.
Zurück zum Zitat C. Vial et al., “A new approach for the prediction of the neutron-induced SEU rate”, IEEE Trans. Nucl. Sci., vol. 45, pp. 2915–2920, 1998.CrossRef C. Vial et al., “A new approach for the prediction of the neutron-induced SEU rate”, IEEE Trans. Nucl. Sci., vol. 45, pp. 2915–2920, 1998.CrossRef
9.
Zurück zum Zitat G. Hubert et al., “Detailed analysis of secondary ions’ effect for the calculation of neutron-induced SER in SRAMs”, IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1953–1959, 2001.CrossRef G. Hubert et al., “Detailed analysis of secondary ions’ effect for the calculation of neutron-induced SER in SRAMs”, IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1953–1959, 2001.CrossRef
10.
Zurück zum Zitat G. Hubert et al., “Review of DASIE Family Code: Contribution to SEU/MBU Understanding”, 11th IEEE International On-Line Testing Symposium 2005, Saint-Raphael, France. G. Hubert et al., “Review of DASIE Family Code: Contribution to SEU/MBU Understanding”, 11th IEEE International On-Line Testing Symposium 2005, Saint-Raphael, France.
11.
Zurück zum Zitat G. Hubert et al., “Simplified Monte Carlo DASIE method dedicated to the MBU understanding and characterization in integrated devices”, NSREC 2005, Seattle, USA. G. Hubert et al., “Simplified Monte Carlo DASIE method dedicated to the MBU understanding and characterization in integrated devices”, NSREC 2005, Seattle, USA.
12.
Zurück zum Zitat Y. Yahagi et al., “Self-consistent integrated system for susceptibility to terrestrial neutron induced soft-error of sub-quarter micron memory devices”, Integrated Reliability Workshop Final Report, 2002. IEEE International, 21–24 Oct. 2002, pp. 143–146. Y. Yahagi et al., “Self-consistent integrated system for susceptibility to terrestrial neutron induced soft-error of sub-quarter micron memory devices”, Integrated Reliability Workshop Final Report, 2002. IEEE International, 21–24 Oct. 2002, pp. 143–146.
13.
Zurück zum Zitat H. H. K. Tang et al., “SEMM-2: a modeling system for single event upset analysis”, IEEE Trans. Nucl. Sci., vol. 51, no. 6, Part 2, pp. 3342–3348, 2004.CrossRef H. H. K. Tang et al., “SEMM-2: a modeling system for single event upset analysis”, IEEE Trans. Nucl. Sci., vol. 51, no. 6, Part 2, pp. 3342–3348, 2004.CrossRef
14.
Zurück zum Zitat P. C. Murley and G. R. Srinivasan. “Soft-error Monte Carlo modeling program, SEMM”. IBM J. Res. Dev., vol. 40, no. 1, pp. 109–118, 1996.CrossRef P. C. Murley and G. R. Srinivasan. “Soft-error Monte Carlo modeling program, SEMM”. IBM J. Res. Dev., vol. 40, no. 1, pp. 109–118, 1996.CrossRef
15.
Zurück zum Zitat F. Wrobel et al., “Use of Nuclear Codes for Neutron-Induced Reactions in Microelectronics”, 11th IEEE International On-Line Testing Symposium 2005, Saint-Raphael, France. F. Wrobel et al., “Use of Nuclear Codes for Neutron-Induced Reactions in Microelectronics”, 11th IEEE International On-Line Testing Symposium 2005, Saint-Raphael, France.
16.
Zurück zum Zitat G. Hubert et al., “Study of basic mechanisms induced by an ionizing particle on simple structures”, IEEE Trans. Nucl. Sci., vol. 47, pp. 519–526, 2000.CrossRef G. Hubert et al., “Study of basic mechanisms induced by an ionizing particle on simple structures”, IEEE Trans. Nucl. Sci., vol. 47, pp. 519–526, 2000.CrossRef
17.
Zurück zum Zitat PH. Roche et al., “Determination on key parameters for SEU using full cell 3-D SRAM simulations”, IEEE Trans. Nucl. Sci., vol. 46, pp. 1354–1362, 1999.CrossRef PH. Roche et al., “Determination on key parameters for SEU using full cell 3-D SRAM simulations”, IEEE Trans. Nucl. Sci., vol. 46, pp. 1354–1362, 1999.CrossRef
18.
Zurück zum Zitat J.-M. Palau et al., “Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions”, IEEE Trans. Nucl. Sci., vol. 48, no. 2, pp. 225–231, 2001.CrossRef J.-M. Palau et al., “Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions”, IEEE Trans. Nucl. Sci., vol. 48, no. 2, pp. 225–231, 2001.CrossRef
19.
Zurück zum Zitat N. Seifert et al., “Radiation-induced soft error rates of advanced CMOS bulk devices”, 44th Annual International Reliability Physics Symposium, 2006, IEEE, pp. 217–225. N. Seifert et al., “Radiation-induced soft error rates of advanced CMOS bulk devices”, 44th Annual International Reliability Physics Symposium, 2006, IEEE, pp. 217–225.
20.
Zurück zum Zitat G. C. Messenger, “Collection of charge on junction nodes from ion tracks”, IEEE Trans. Nucl. Sci., vol. 29, no. 6, pp. 2024–2031, 1982.CrossRef G. C. Messenger, “Collection of charge on junction nodes from ion tracks”, IEEE Trans. Nucl. Sci., vol. 29, no. 6, pp. 2024–2031, 1982.CrossRef
Metadaten
Titel
Gate Level Modeling and Simulation
verfasst von
Nadine Buard
Lorena Anghel
Copyright-Jahr
2011
Verlag
Springer US
DOI
https://doi.org/10.1007/978-1-4419-6993-4_4

Neuer Inhalt