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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 9/2019

28.03.2019

Generation of oxygen interstitials with excess in situ Ga doping in chemical bath deposition process for the growth of p-type ZnO nanowires

verfasst von: Rajib Saha, Nayan Ranjan Saha, Anupam Karmakar, Goutam Kumar Dalapati, Sanatan Chattopadhyay

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2019

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Abstract

The current work focuses on the incorporation of excess amount of gallium (Ga) in zinc oxide (ZnO) nanowires to generate oxygen interstitials for developing p-type conductivity. Ga has been used as an n-type dopant in ZnO lattice by reducing its inherent vacancies up to 3% molar ratio of Ga and Zn employing chemical bath deposition technique. However, the addition of more than 4% of gallium nitrate in the bath solution creates oxygen interstitials which are confirmed from the presence of X-ray photoelectron spectroscopy (XPS) peak at 532.6 eV and the relevant cathodoluminescence (CL) peak at 626 nm of the grown Ga-doped ZnO nanowires. The p-type conductivity of such ZnO nanowires has been confirmed from current–voltage, capacitance–voltage and Hall voltage measurements. The reproducibility of the results indicates the incorporation of excess Ga to be a promising technique for growing p-type ZnO nanowires.
Vorheriger Artikel Novel, green and low cost synthesis of Ag nanoparticles with superior adsorption and solar based photocatalytic activity
Nächster Artikel Magneto-resistivity and magnetization investigations of YBCO superconductor added by nano-wires and nano-particles of titanium oxide

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Metadaten
Titel
Generation of oxygen interstitials with excess in situ Ga doping in chemical bath deposition process for the growth of p-type ZnO nanowires
verfasst von
Rajib Saha
Nayan Ranjan Saha
Anupam Karmakar
Goutam Kumar Dalapati
Sanatan Chattopadhyay
Publikationsdatum
28.03.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 9/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01204-4

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