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13.12.2017 | Electronic materials

Growth of (111)-oriented epitaxial magnesium silicide (Mg₂Si) films on (001) Al₂O₃ substrates by RF magnetron sputtering and their properties

verfasst von: Atsuo Katagiri, Shota Ogawa, Mutsuo Uehara, P. S. Sankara Rama Krishnan, Mao Kurokawa, Masaaki Matsushima, Takao Shimizu, Kensuke Akiyama, Hiroshi Funakubo

Erschienen in: Journal of Materials Science | Ausgabe 7/2018

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Abstract

Epitaxial Mg₂Si films with (111) orientation were successfully grown at 300 °C on (001) Al₂O₃ insulating substrates by RF magnetron sputtering method. The optimal conditions for the epitaxial growth were identified as a low deposition rate and high deposition pressure above 60 mTorr. X-ray diffraction and transmission electron microscopy analysis confirmed the growth of (111)-oriented epitaxial Mg₂Si films with the following relationship: (111) Mg₂Si//(001)Al₂O₃. The conduction type of the epitaxial films was p-type up to 450 °C, which is same conduction type of the (110)-one-axis oriented ones. The electrical conductivity of the epitaxial films was lower than that of (110)-one-axis oriented ones.

Vorheriger Artikel Computational studies on the absorption enhancement of nanocomposites of tetraphenylporphyrin and graphene quantum dot as sensitizers in solar cell

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Titel: Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties
verfasst von: Atsuo Katagiri
Shota Ogawa
Mutsuo Uehara
P. S. Sankara Rama Krishnan
Mao Kurokawa
Masaaki Matsushima
Takao Shimizu
Kensuke Akiyama
Hiroshi Funakubo
Publikationsdatum: 13.12.2017
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 7/2018
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-017-1902-z

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