Growth, optical, mechanical, thermo-physical, laser damage threshold (LDT) and Z-scan studies on dilithium succinate single crystal for optical limiting applications

Dilithium Succinate (DLiS), a third order non-linear optical single crystal was grown efficaciously by adopting slow evaporation technique (SEST) at 303 K. DLiS crystal crystallizes into rhombohedral system with unit cell parameters a = 12.05 Å, b = 12.05 Å, c = 10.65 Å with V = 1339 Å³. ICP-OES analysis ratifies the presence of alkali metal lithium in the synthesized material. In order to evaluate the mechanical nature of the crystal Vicker’s microhardness study was carried out and diverse universalistic hardness parameters like fracture toughness (K_c), brittleness index (B_i), yield strength (σ_v) and stiffness constant (C₁₁) are calculated. Reverse indentation size effect (RISE) was demonstrated using Hays-Kendall approach (HK) and proportion resistance model (PSR). TG–DSC studies depicts the thermal stability and disintegration of the grown crystal. Photoacoustic study reveals the thermal effusivity, thermal conductivity and thermal diffusivity for the grown crystal and their results are compared. The grown crystal exhibits negative photoconductivity. The result found from Z-scan technique bestow the grown crystal is a versed material for photonic device applications. The laser damage threshold (LDT) value of the grown crystal is higher than KDP and urea.