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Microsystem Technologies

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23.12.2023 | Technical Paper

Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications

verfasst von: Aapurva Kaul, Sonam Rewari, Deva Nand

Erschienen in: Microsystem Technologies | Ausgabe 5/2024

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Abstract

In this paper a Hetero-Dielectric Macaroni Channel Cylindrical Gate All Around FET (HD-MC CGAA FET) is proposed for reduced gate leakage analog application. The proffered device is also compared with a conventional Nanowire FET (NW-FET) and Dual Metal Hetero-Dielectric Cylindrical Gate All Around FET (DM-HD CGAA FET) so as to indicate the device efficiency of HD-MC CGAA FET. Both DM-HD CGAA FET and HD-MC CGAA FET have a combined vacuum dielectric at the drain with a silicon dioxide (SiO₂) gate dielectric at the source. The structure has a symmetric gate oxide that is excellent for low power applications because of its considerably lower BTBT and OFF state gate leakages. GIDL of the HD-MC CGAA FET is lower, suggesting that this device has better insulation against leakages and its I_ON/I_OFF ratio is higher making it better for digital applications. Based on the qualitatively obtained results, I_ON/I_OFF ratio of HD-MC CGAA FET is 856 times better than NW-FET and 309 times better than DM-HD CGAA FET. GIDL current of HD-MC CGAA FET is measured to be 10^–14 A as compared to 10^–12 A of DM-HD CGAA FET and 10^–10 A of NW-FET. It has also been entrenched that HD-MC CGAA FET has more promising I_DS, g_m, g_d, GIDL, hole concentration, Transconduction Generation Factor and I_ON/I_OFF ratio than the existing NW-FET and DM-HD CGAA FET making it highly applicable for low leakage and high frequency digital and analog application.

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Titel: Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications
verfasst von: Aapurva Kaul
Sonam Rewari
Deva Nand
Publikationsdatum: 23.12.2023
Verlag: Springer Berlin Heidelberg
Erschienen in: Microsystem Technologies / Ausgabe 5/2024
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-023-05577-9

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