Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications

In this paper a Hetero-Dielectric Macaroni Channel Cylindrical Gate All Around FET (HD-MC CGAA FET) is proposed for reduced gate leakage analog application. The proffered device is also compared with a conventional Nanowire FET (NW-FET) and Dual Metal Hetero-Dielectric Cylindrical Gate All Around FET (DM-HD CGAA FET) so as to indicate the device efficiency of HD-MC CGAA FET. Both DM-HD CGAA FET and HD-MC CGAA FET have a combined vacuum dielectric at the drain with a silicon dioxide (SiO₂) gate dielectric at the source. The structure has a symmetric gate oxide that is excellent for low power applications because of its considerably lower BTBT and OFF state gate leakages. GIDL of the HD-MC CGAA FET is lower, suggesting that this device has better insulation against leakages and its I_ON/I_OFF ratio is higher making it better for digital applications. Based on the qualitatively obtained results, I_ON/I_OFF ratio of HD-MC CGAA FET is 856 times better than NW-FET and 309 times better than DM-HD CGAA FET. GIDL current of HD-MC CGAA FET is measured to be 10^–14 A as compared to 10^–12 A of DM-HD CGAA FET and 10^–10 A of NW-FET. It has also been entrenched that HD-MC CGAA FET has more promising I_DS, g_m, g_d, GIDL, hole concentration, Transconduction Generation Factor and I_ON/I_OFF ratio than the existing NW-FET and DM-HD CGAA FET making it highly applicable for low leakage and high frequency digital and analog application.