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2004 | OriginalPaper | Buchkapitel

Heterojunction Bipolar Transistors

verfasst von : Dr. techn.Dipl.-Ing. Vassil Palankovski, Dr. techn.Dipl.-Phys. Rüdiger Quay

Erschienen in: Analysis and Simulation of Heterostructure Devices

Verlag: Springer Vienna

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Heterojunction Bipolar Transistors (HBTs) are an advanced development of the Bipolar Junction Transistors (BJTs). The basic principles of operation of bipolar transistors are explained in detail elsewhere, e.g. in [305, 496, 570].

Metadaten
Titel
Heterojunction Bipolar Transistors
verfasst von
Dr. techn.Dipl.-Ing. Vassil Palankovski
Dr. techn.Dipl.-Phys. Rüdiger Quay
Copyright-Jahr
2004
Verlag
Springer Vienna
DOI
https://doi.org/10.1007/978-3-7091-0560-3_5

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