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Erschienen in:
2004 | OriginalPaper | Buchkapitel
High Electron Mobility Transistors
verfasst von : Dr. techn.Dipl.-Ing. Vassil Palankovski, Dr. techn.Dipl.-Phys. Rüdiger Quay
Erschienen in: Analysis and Simulation of Heterostructure Devices
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
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High Electron Mobility Transistors(HEMTs) [340] are an advanced modification of the simple bulk FET, such as the MEtal Semiconductors Field Effect Transistor (MESFET). Typically, a semiconductor material (barrier) with a comparably wider bandgap is grown on top of a semiconductor material with a higher mobility and comparably lower bandgap. If the bandgap alignment of the two materials is appropriately chosen, a channel forms due solely to the alignmentof the band edges and not, as for silicon MOSFETs or III-V MESFETs [460], due to an oxide/semiconductor interface or doping profiles. The channel material is not intentionally doped.