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Journal of Materials Science
Erschienen in: Journal of Materials Science 29/2020

24.06.2020 | Electronic materials

High mobility monolayer MoS2 transistors and its charge transport behaviour under E-beam irradiation

verfasst von: Tao Shen, Feng Li, Lei Xu, Zhenyun Zhang, Fazheng Qiu, Zhichao Li, Junjie Qi

Erschienen in: Journal of Materials Science | Ausgabe 29/2020

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Abstract

Electron-beam irradiation (EBI) is an effective approach to engineer defects for two-dimensional (2D) materials. However, a detailed understanding of the effects of EBI on charge transport of 2D materials is still lacking. Herein, the value of source-drain current of monolayer MoS2 transistors can be largely improved by about 3 orders of magnitude under EBI, from 5 nA to 24.6 μA at 2 V bias voltage. In addition, a room-temperature mobility (μ) as high as ~ 83 cm2 V−1 s−1 was achieved when the device was irradiated for 80 s with a 10 kV accelerating voltage (~ 5.5% sulphur vacancies), far exceeding (about 80 times) that of the untreated device. The improvements of electrical properties after EBI are mainly attributed to the introduction of electrons and the enhanced charge transport channels. The charge transport behaviour under EBI exhibits variable range hopping associated with temperature. Our findings provide an avenue for building high performance electronics based on 2D materials.
Vorheriger Artikel Fe-quaterpyridine complex: a comprehensive DFT study on the mechanism of CO2-to-CO conversion
Nächster Artikel Radiation-induced absorption and photobleaching in erbium Al–Ge-codoped optical fiber

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Metadaten
Titel
High mobility monolayer MoS2 transistors and its charge transport behaviour under E-beam irradiation
verfasst von
Tao Shen
Feng Li
Lei Xu
Zhenyun Zhang
Fazheng Qiu
Zhichao Li
Junjie Qi
Publikationsdatum
24.06.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 29/2020
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-020-04977-w

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