Skip to main content
Erschienen in: Microsystem Technologies 8/2017

08.11.2016 | Technical Paper

High quality factor RF MEMS tunable capacitor

verfasst von: Zewdu Hailu

Erschienen in: Microsystem Technologies | Ausgabe 8/2017

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

This paper presents the design of a tunable capacitor that integrates two vertical comb-drive tunable capacitors and a parallel plate tunable capacitor. The parallel plate tunable capacitor is in the middle of the comb-drive tunable capacitors. The vertical comb-drive part has sets of fixed and moving fingers while the parallel plate has fixed and moving plates. The capacitor is fabricated using the MetalMUMPs microfabrication process, which has only one thick structural layer i.e. metal (20 μm nickel and 0.5 μm gold). The nickel of the metal layer is subject to residual stress gradients along its thickness. After release of the metal layer, the stress gradients bend the curve-up beams to raise the moving fingers and the moving plate of the capacitor above the substrate and the fixed plate. Hence, one structural layer (i.e. the metal) is used to form the moving and the fixed comb fingers without requiring two structural layers. Vertical comb-driven tunable capacitors offer high capacitance density when a large number of fingers with narrow gap are used. Therefore, high capacitance ratio and high quality factors can be achieved by using vertical comb-drives with in a relatively small device area compared to lateral comb-drives. The parallel plate driving part increases the displacement and capacitance ratio while reducing the actuation voltage required for driving the capacitor. The quality factor and tuning ratio of the fabricated tunable capacitor are 118.5 and 101% at 0.8 GHz; respectively at a driving voltage of 100 V. Based on the experimental results of the fabricated tunable capacitor, an optimized design is presented for both high tuning ratio and high quality factor. The tuning ratio of the optimized capacitor is found to be 143.1% at a “pull-in” displacement of 9.5 µm and a “pull-in” voltage of 90 V. The quality factors of the optimized capacitor are 520 at 0 V and 363.5 at 90 V, respectively at 0.8 GHz. The tunable capacitor achieves a displacement of more than one-half of the gap between the parallel plates without “pull-in” effect.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literatur
Zurück zum Zitat Auciello O, Saha S, Kaufman DY, Streiffer SK, Fan W, Kabius B, Im J, Baumann P (2004) Science and technology of high dielectric constant thin films and materials integration for application to high frequency devices. J Electroceram 12(1/2):119–131CrossRef Auciello O, Saha S, Kaufman DY, Streiffer SK, Fan W, Kabius B, Im J, Baumann P (2004) Science and technology of high dielectric constant thin films and materials integration for application to high frequency devices. J Electroceram 12(1/2):119–131CrossRef
Zurück zum Zitat Ayguavives T, Tombak A, Maria J-P, Stauf GT, Ragaglia C, Roeder J, Mortazawi A, Kingon AI (2000) Physical properties of (Ba, Sr)TiO3 thin films used for integrated capacitors in microwave applications. Proc IEEE ISAF 1:365–368 Ayguavives T, Tombak A, Maria J-P, Stauf GT, Ragaglia C, Roeder J, Mortazawi A, Kingon AI (2000) Physical properties of (Ba, Sr)TiO3 thin films used for integrated capacitors in microwave applications. Proc IEEE ISAF 1:365–368
Zurück zum Zitat Bakri-Kassem M, Mansour RR (2004) Two movable-plate nitride-loaded MEMS variable capacitor. IEEE Trans Microw Theory Tech 52(3):831–837CrossRef Bakri-Kassem M, Mansour RR (2004) Two movable-plate nitride-loaded MEMS variable capacitor. IEEE Trans Microw Theory Tech 52(3):831–837CrossRef
Zurück zum Zitat Borwick RL et al (2003a) A high Q, large tuning MEMS capacitor for RF Filter systems. Sens Actuators A103:33–41CrossRef Borwick RL et al (2003a) A high Q, large tuning MEMS capacitor for RF Filter systems. Sens Actuators A103:33–41CrossRef
Zurück zum Zitat Borwick RL et al (2003b) Variable MEMS capacitors implemented into RF filter systems. IEEE Trans Microw Theory Technol 51:315–319CrossRef Borwick RL et al (2003b) Variable MEMS capacitors implemented into RF filter systems. IEEE Trans Microw Theory Technol 51:315–319CrossRef
Zurück zum Zitat Dec A, Suyama K (1998) RF Micromachined varactors with wide tuning range. In: IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 7–9 June, pp 309–312 Dec A, Suyama K (1998) RF Micromachined varactors with wide tuning range. In: IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 7–9 June, pp 309–312
Zurück zum Zitat Ehmke J, Brank J, Malczewski A, Pillans B, Eshelman S, Yao J, Goldsmith C (2000) RF MEMS devices: a brave new world for RF technology. In: IEEE Emerging Technologies Symposium 2000 Ehmke J, Brank J, Malczewski A, Pillans B, Eshelman S, Yao J, Goldsmith C (2000) RF MEMS devices: a brave new world for RF technology. In: IEEE Emerging Technologies Symposium 2000
Zurück zum Zitat Grichener A, Rebeiz GM (2010) High-reliability RF-MEMS switched capacitors with digital and analog tuning characteristics. IEEE Trans Microw Theory Techn 58 (10), Article. No. 5575376, pp 2692–2701 Grichener A, Rebeiz GM (2010) High-reliability RF-MEMS switched capacitors with digital and analog tuning characteristics. IEEE Trans Microw Theory Techn 58 (10), Article. No. 5575376, pp 2692–2701
Zurück zum Zitat Grichener A, Mercier D, Rebeiz GM (2006) High-power, high-reliability, high-Q switched RF MEMS capacitors. In: International Microwave Symposium Digest, pp 31–34 Grichener A, Mercier D, Rebeiz GM (2006) High-power, high-reliability, high-Q switched RF MEMS capacitors. In: International Microwave Symposium Digest, pp 31–34
Zurück zum Zitat Hailu Z (2014) Novel RF MEMS Tunable Capacitors, Ph.D. thesis Hailu Z (2014) Novel RF MEMS Tunable Capacitors, Ph.D. thesis
Zurück zum Zitat Hailu Z, He S, Mrad RB (2014) A novel vertical comb-drive electrostatic actuator using a one layer process. J Micromech Microeng 24 (11):115016, pp 1–11 Hailu Z, He S, Mrad RB (2014) A novel vertical comb-drive electrostatic actuator using a one layer process. J Micromech Microeng 24 (11):115016, pp 1–11
Zurück zum Zitat Hailu Z, He S, Mrad RB (2016) Hybrid Micro electrostatic actuator. Microsyst Technol 22:319–327CrossRef Hailu Z, He S, Mrad RB (2016) Hybrid Micro electrostatic actuator. Microsyst Technol 22:319–327CrossRef
Zurück zum Zitat He S, Chang JS, Li L, Ho H (2009) Characterization of Young’s modulus and residual stress gradient of MetalMUMPs electroplated nickel film. Sens Actuators 154(1):149–156CrossRef He S, Chang JS, Li L, Ho H (2009) Characterization of Young’s modulus and residual stress gradient of MetalMUMPs electroplated nickel film. Sens Actuators 154(1):149–156CrossRef
Zurück zum Zitat Hoivik N, Michalicek MA, Lee YC, Gupta KC, Bright VM (2001) Digitally controllable variable high-Q MEMS capacitor for RF applications. In: IEEE MTT-S International Microwave Symposium Digest, Phoenix, AZ, May 2001, pp 2115–2118 Hoivik N, Michalicek MA, Lee YC, Gupta KC, Bright VM (2001) Digitally controllable variable high-Q MEMS capacitor for RF applications. In: IEEE MTT-S International Microwave Symposium Digest, Phoenix, AZ, May 2001, pp 2115–2118
Zurück zum Zitat Ionis GV, Dec A, Suyaman K (2002) Differential multi-finger MEMS tunable capacitors for RF Integrated Circuits. In: IEEE MTT-S International Microwave Symposium Digest, vol 1, pp 345–348 Ionis GV, Dec A, Suyaman K (2002) Differential multi-finger MEMS tunable capacitors for RF Integrated Circuits. In: IEEE MTT-S International Microwave Symposium Digest, vol 1, pp 345–348
Zurück zum Zitat Jakoby R, Scheele P, Muller S, Weil C (2004) Nonlinear dielectrics for tunable microwave components. In: Proc. IEEE Int. Conf. Microw., Radar Wireless Commun., May 2004, vol 2, pp 369–378 Jakoby R, Scheele P, Muller S, Weil C (2004) Nonlinear dielectrics for tunable microwave components. In: Proc. IEEE Int. Conf. Microw., Radar Wireless Commun., May 2004, vol 2, pp 369–378
Zurück zum Zitat Jung S et al (2001) Micromachined frequency variable impedance tuners using resonant unit cells. In: IEEE MTT-S International Microwave Symposium Digest, Phoenix, AZ, May 2001, pp 333–336 Jung S et al (2001) Micromachined frequency variable impedance tuners using resonant unit cells. In: IEEE MTT-S International Microwave Symposium Digest, Phoenix, AZ, May 2001, pp 333–336
Zurück zum Zitat Lee H, Yoon YJ, Choi D-H, Yoon J-B (2008) High-Q, tunable gap MEMS variable capacitor actuated with an electrically floating plate. In: Proc. IEEE Int. Conf. Micro Electro Mech. Syst., pp 180–183 Lee H, Yoon YJ, Choi D-H, Yoon J-B (2008) High-Q, tunable gap MEMS variable capacitor actuated with an electrically floating plate. In: Proc. IEEE Int. Conf. Micro Electro Mech. Syst., pp 180–183
Zurück zum Zitat Mahameed R, El-Tanani MA, Rebeiz GM (2010) A zipper RF MEMS tunable capacitor with interdigitated RF and actuation electrodes. J Micromech Microeng 20(3):035014CrossRef Mahameed R, El-Tanani MA, Rebeiz GM (2010) A zipper RF MEMS tunable capacitor with interdigitated RF and actuation electrodes. J Micromech Microeng 20(3):035014CrossRef
Zurück zum Zitat Nguyen HD, Hah D, Patterson PR, Chao R, Piyawattanametha W, Lau EK, Wu MCM (2004) Angular vertical comb-driven tunable capacitor with high-tuning capabilities. J Microelectromech Syst 13(3):406–413CrossRef Nguyen HD, Hah D, Patterson PR, Chao R, Piyawattanametha W, Lau EK, Wu MCM (2004) Angular vertical comb-driven tunable capacitor with high-tuning capabilities. J Microelectromech Syst 13(3):406–413CrossRef
Zurück zum Zitat Pervez NK, Hansen PJ, York R (2004) Optimization of high tunability BST thin films grown by RF magnetron sputtering. In: Proc. IEEE UFFC50th Anniversary Conf., Aug. 2004, pp. 278–280 Pervez NK, Hansen PJ, York R (2004) Optimization of high tunability BST thin films grown by RF magnetron sputtering. In: Proc. IEEE UFFC50th Anniversary Conf., Aug. 2004, pp. 278–280
Zurück zum Zitat Pozar DM (2005) Microwave engineering, 4th edn. Wiley and Sons Inc, New York Pozar DM (2005) Microwave engineering, 4th edn. Wiley and Sons Inc, New York
Zurück zum Zitat Rais-Zadeh M, Ayazi F (2007) High-Q tunable silver capacitors for RFIC’s. In: Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2007, vol no., pp 169–172, 10–12 January 2007 Rais-Zadeh M, Ayazi F (2007) High-Q tunable silver capacitors for RFIC’s. In: Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2007, vol no., pp 169–172, 10–12 January 2007
Zurück zum Zitat Rebeiz GM (2003) RF MEMS—theory, design, and technology. Wiley and Sons Inc, New York Rebeiz GM (2003) RF MEMS—theory, design, and technology. Wiley and Sons Inc, New York
Zurück zum Zitat Rebeiz GM et al (2009) Tuning into RF MEMS, IEEE Microwave magazine, October 2009, pp 55–72 Rebeiz GM et al (2009) Tuning into RF MEMS, IEEE Microwave magazine, October 2009, pp 55–72
Zurück zum Zitat Rijks et al (2004) MEMS Tunable Capacitors and Switches for RF Applications. In: Proceedings of 24th International Conference on Microelectronics, 16–19 May 2004, Serbia and Montenegro, pp 49–56 Rijks et al (2004) MEMS Tunable Capacitors and Switches for RF Applications. In: Proceedings of 24th International Conference on Microelectronics, 16–19 May 2004, Serbia and Montenegro, pp 49–56
Zurück zum Zitat Schafranek R, Giere A, Balogh AG, Enza T, Zheng Y, Scheele P, Jakoby R, Klein A (2009) Influence of sputter deposition parameters on the properties of tunable barium strontium titanate thin films for microwave applications. J Eur Ceram Soc 29(8):1433–1442CrossRef Schafranek R, Giere A, Balogh AG, Enza T, Zheng Y, Scheele P, Jakoby R, Klein A (2009) Influence of sputter deposition parameters on the properties of tunable barium strontium titanate thin films for microwave applications. J Eur Ceram Soc 29(8):1433–1442CrossRef
Zurück zum Zitat Seok S, Choi W, Chun K (2002) A Novel linearly tunable MEMS variable capacitor. J Micromech Microeng 12:82–86CrossRef Seok S, Choi W, Chun K (2002) A Novel linearly tunable MEMS variable capacitor. J Micromech Microeng 12:82–86CrossRef
Zurück zum Zitat Sze SM, Ng KK (2005) Physics of semiconductor devices, 3rd edn. Wiley-Interscience, New York Sze SM, Ng KK (2005) Physics of semiconductor devices, 3rd edn. Wiley-Interscience, New York
Zurück zum Zitat Vicki Chen L-Y, Forse R, Chase D, York RA (2004) Analogue tunable matching network using integrated thin-film BST capacitors. In: Proc.IEEE MTT-S Int. Microw. Symp. Exhib., June 2004, vol 1, pp 261–264 Vicki Chen L-Y, Forse R, Chase D, York RA (2004) Analogue tunable matching network using integrated thin-film BST capacitors. In: Proc.IEEE MTT-S Int. Microw. Symp. Exhib., June 2004, vol 1, pp 261–264
Zurück zum Zitat Vorobiev A, Rundqvist P, Khamchane K, Gevorgian S (2005) Microwave loss mechanisms in Ba0.25Sr0.75TiO 3 films. Mater Sci Eng B Solid State Mater Adv Technol 118(1–3):214–218CrossRef Vorobiev A, Rundqvist P, Khamchane K, Gevorgian S (2005) Microwave loss mechanisms in Ba0.25Sr0.75TiO 3 films. Mater Sci Eng B Solid State Mater Adv Technol 118(1–3):214–218CrossRef
Zurück zum Zitat Yao JJ (2000) RF MEMS from a device perspective. J Micromech Microeng Struct Devices Syst IO Part 4:R9–R38CrossRef Yao JJ (2000) RF MEMS from a device perspective. J Micromech Microeng Struct Devices Syst IO Part 4:R9–R38CrossRef
Zurück zum Zitat Yoon JB, Nguyen CTC (2000) A high-Q tunable micromechanical capacitor with movable dielectric for RF applications. In: Technical Digest, IEEE Int. Electron Devices Meeting, San Francisco, California, Dec. 11–13, pp 489–492 Yoon JB, Nguyen CTC (2000) A high-Q tunable micromechanical capacitor with movable dielectric for RF applications. In: Technical Digest, IEEE Int. Electron Devices Meeting, San Francisco, California, Dec. 11–13, pp 489–492
Zurück zum Zitat Young DJ, Boser BE (1997) A micro-machined based RF low-noise voltage-controlled oscillator. In: Proceedings of the IEEE 1997 Custom Integrated Circuits Conference, June 1996, pp 431–434 Young DJ, Boser BE (1997) A micro-machined based RF low-noise voltage-controlled oscillator. In: Proceedings of the IEEE 1997 Custom Integrated Circuits Conference, June 1996, pp 431–434
Zurück zum Zitat Zou J et al (2000) Development of wide tuning range MEMS tunable capacitor for wireless communication systems. In: Technical Digest, International Electron Devices Meeting, San Francisco, CA, USA, pp 403–406 Zou J et al (2000) Development of wide tuning range MEMS tunable capacitor for wireless communication systems. In: Technical Digest, International Electron Devices Meeting, San Francisco, CA, USA, pp 403–406
Metadaten
Titel
High quality factor RF MEMS tunable capacitor
verfasst von
Zewdu Hailu
Publikationsdatum
08.11.2016
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 8/2017
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-016-3181-z

Weitere Artikel der Ausgabe 8/2017

Microsystem Technologies 8/2017 Zur Ausgabe

Neuer Inhalt