Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Bücher
Zeitschriften
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
SLX-Digitalkonferenz: Zukunftswerkstatt 2024

Mehr Umsatz mit Top-Kontakten

Am 7. Mai erfahren Sie, wie Vertriebsteams Leadgenerierung, Leadnurturing und Leadstrategien effizient steuern können.
Erweiterte Suche
Anmelden
nach oben
Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 19/2018

03.08.2018

High-temperature dielectrics based on (1 − x)[0.94Bi0.5Na0.5TiO3–0.06BaTiO3–0.03AgNbO3]–xK0.5Na0.5NbO3

verfasst von: Pengrong Ren, Jiaojiao He, Xin Wang, Yuhui Wan, Fuxue Yan, Gaoyang Zhao

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 19/2018

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

High temperature dielectrics based on (1 − x)[0.94Bi0.5Na0.5TiO3–0.06BaTiO3–0.03AgNbO3]–xK0.5Na0.5NbO3 (BNTBTAN–100xKNN, x = 0.01, 0.02, 0.03, 0.04) are prepared. The effects of K0.5Na0.5NbO3 contents on temperature stability of dielectric properties of BNTBTAN–100xKNN ceramics in the temperature range between 25 and 500 °C are studied. By incorporation of certain amount of AgNbO3, the required K0.5Na0.5NbO3 contents to disrupt the correlation among polar nanoregions in Bi0.5Na0.5TiO3 is reduced, thus this system not only has stable permittivity, but more importantly, behaves high insulting behavior, leading to the lower dielectric loss at high temperature. In particular, BNTBTAN–4KNN exhibits high dielectric permittivity (~ 2452), low dielectric loss (≤ 0.02) in the temperature range between 126 and 319 °C and small variation (Δε′/ε′150 °C ≤ 15%) in dielectric permittivity from 51 to 371 °C. Therefore, our work provides a new promising candidate of materials for capacitors which can be operated at high temperature.
Vorheriger Artikel Low temperature sintering and microwave dielectric properties of Li2ZnTi3O8–TiO2 ceramics doped with BaO–B2O3–ZnO glass
Nächster Artikel Direct photo-oxidation and superoxide radical as major responsible for dye photodegradation mechanism promoted by TiO2–rGO heterostructure

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Jetzt informieren
Literatur
1.
J. Watson, G. Castro, A review of high-temperature electronics technology and applications. J. Mater. Sci.: Mater. Electron. 26, 9226–9235 (2015)
2.
M.J. Pan, C.A. Randall, A brief introduction to ceramic capacitors. IEEE Electr. Insul. Mag. 26, 44–50 (2010)CrossRef
3.
M. Acosta, J.D. Zang, W. Jo, J. Rödel, High-temperature dielectrics in CaZrO3-modified Bi1/2Na1/2TiO3-based lead-free ceramics. J. Eur. Ceram. Soc. 32, 4327–4334 (2012)CrossRef
4.
R. Muhammad, Y. Iqbal, I.M. Reaney, C. Randall, BaTiO3-Bi (Mg2/3Nb1/3)O3 ceramics for high-temperature capacitor applications. J. Am. Ceram. Soc. 99, 2089–2095 (2016)CrossRef
5.
B.L. Peng, Q. Zhang, X. Li, T.Y. Sun, H.Q. Fan, S.M. Ke, M. Ye, Y. Wang, W. Lu, H.B. Niu, J.F. Scott, X.R. Zeng, H.T. Huang, Giant electric energy density in epitaxial lead-free thin films with coexistence of ferroelectrics and antiferroelectrics. Adv. Electron. Mater. 1, 1500052 (2015)CrossRef
6.
T.Y. Li, X.J. Lou, X.Q. Ke, S.D. Cheng, S.B. Mi, X.J. Wang, J. Shi, X. Liu, G.Z. Dong, H.Q. Fan, Y.Z. Wang, X.L. Tan, Giant strain with low hysteresis in A-site-deficient (Bi0.5Na0.5)TiO3-based lead-free piezoceramics. Acta Mater. 128, 337–344 (2017)CrossRef
7.
J. Shi, H.Q. Fan, X. Liu, Q. Li, Giant strain response and structure evolution in (Bi0.5Na0.5)0.945-x(Bi0.2Sr0.7□0.1)xBa0.055TiO3 ceramics. J. Eur. Ceram. Soc. 34, 3675–3683 (2014)CrossRef
8.
C.W. Cui, Y.P. Pu, Z.Y. Gao, J. Wan, Y.S. Guo, C.Y. Hui, Y.R. Wang, Y.F. Cui, Structure, dielectric and relaxor properties in lead-free ST-NBT ceramics for high energy storage applications. J. Alloys Compd. 711, 319–326 (2017)CrossRef
9.
S.T. Zhang, A.B. Kounga, E. Aulbach, H. Ehrenberg, J. Rödel, Giant strain in lead-free piezoceramics Bi0.5Na0.5TiO3–BaTiO3–K0.5Na0.5NbO3 system. Appl. Phys. Lett. 91, 112906 (2007)CrossRef
10.
R. Garg, B. Rao, A. Senyshyn, P. Krishna, R. Ranjan, Lead-free piezoelectric system (Bi1/2Na1/2)TiO3-BaTiO3: equilibrium structures and irreversible structural transformations driven by electric field and mechanical impact. Phys. Rev. B 88, 2358–2367 (2013)CrossRef
11.
W.F. Bai, D.Q. Chen, P. Zheng, B. Shen, J.W. Zhai, Z.G. Ji, Composition- and temperature-driven phase transition characteristics and associated electromechanical properties in Bi0.5Na0.5TiO3-based lead-free ceramics. Dalton Trans. 45, 8573–8586 (2016)CrossRef
12.
J.D. Zang, W. Jo, H.B. Zhang, J. Rödel, Bi1/2Na1/2TiO3–BaTiO3 based thick-film capacitors for high-temperature applications. J. Eur. Ceram. Soc. 34, 37–43 (2014)CrossRef
13.
W.X. Jia, Y.D. Hou, M.P. Zheng, M.K. Zhu, High-temperature dielectrics based on (1-x)(0.94Bi0.5Na0.5TiO3-0.06BaTiO3)-xNaNbO3 system. J. Alloys Compd. 724, 306–315 (2017)CrossRef
14.
J.D. Zang, M. Li, D.C. Sinclair, W. Jo, J. Rödel, Impedance spectroscopy of (Bi1/2Na1/2)TiO3–BaTiO3 ceramics modified with (K0.5Na0.5)NbO3. J. Am. Ceram. Soc. 97, 1523–1529 (2014)CrossRef
15.
P. Sciau, A. Kania, B. Dkhil, E. Suard, A. Ratuszna, Structural investigation of AgNbO3 phases using X-ray and neutron diffraction. J. Phys.: Condens. Matter 16, 2795–2810 (2004)
16.
Z.C. Liu, P.R. Ren, C.B. Long, X. Wang, Y.H. Wan, G.Y. Zhao, Enhanced energy storage properties of NaNbO3 and SrZrO3 modified Bi0.5Na0.5TiO3 based ceramics. J. Alloys Compd. 721, 538–544 (2017)CrossRef
17.
J. East, D.C. Sinclair, Characterization of (Bi1/2Na1/2)TiO3 using electric modulus spectroscopy. J. Mater. Sci. Lett. 16, 422–425 (1997)CrossRef
18.
Y.M. Li, W. Chen, J. Zhou, Q. Xu, X.Y. Gu, R.H. Liao, Impedance spectroscopy and dielectric properties of Na0.5Bi0.5TiO3–NaNbO3 ceramics. Physica B 365, 76–81 (2005)CrossRef
19.
M. Li, M.J. Pietrowski, R.A. De Souza, H. Zhang, I.M. Reaney, S.N. Cook, J.A. Kilner, D.C. Sinclair, A family of oxide ion conductors based on the ferroelectric perovskite Na0.5Bi0.5TiO3. Nat. Mater. 13, 31–35 (2014)CrossRef
20.
M. Cernea, A. Galca, M. Cioangher, C. Dragoi, G. Ioncea, Piezoelectric BNT–BT0.11 thin films processed by sol–gel technique. J. Mater. Sci. 46, 5621–5627 (2011)CrossRef
21.
M. Cernea, L. Trupina, C. Dragoi, A.-C. Galca, L. Trinca, Structural, optical, and electric properties of BNT–BT0.08 thin films processed by sol-gel technique. J. Mater. Sci. 47, 6966–6971 (2012)CrossRef
Metadaten
Titel
High-temperature dielectrics based on (1 − x)[0.94Bi0.5Na0.5TiO3–0.06BaTiO3–0.03AgNbO3]–xK0.5Na0.5NbO3
verfasst von
Pengrong Ren
Jiaojiao He
Xin Wang
Yuhui Wan
Fuxue Yan
Gaoyang Zhao
Publikationsdatum
03.08.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 19/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9798-1

Weitere Artikel der Ausgabe 19/2018

Journal of Materials Science: Materials in Electronics 19/2018 Zur Ausgabe

OriginalPaper

Effects of annealing process and the additive on the electrical properties of chemical solution deposition derived 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thin films

OriginalPaper

Low temperature sintering and microwave dielectric properties of Li2ZnTi3O8–TiO2 ceramics doped with BaO–B2O3–ZnO glass

OriginalPaper

Structural, dielectric, thermal and antibacterial properties of a ferroelectric single crystal: bis-glycine cobalt sulphate pentahydrate

OriginalPaper

Humidity sensing properties of fluorine doped zinc oxide thin films

OriginalPaper

Synthesis and characterization of tungsten disulfide thin films by spray pyrolysis technique for n-WS2/p-Si junction diode application

OriginalPaper

Investigation of Sb65Se35/Sb multilayer thin films for high speed and high thermal stability application in phase change memory

Neuer Inhalt

    Bildnachweise