Skip to main content

1997 | OriginalPaper | Buchkapitel

Higher order asymptotic boundary conditions for an oxide region in a semiconductor device

verfasst von : Irene M. Gamba

Erschienen in: Wavelet Theory and Harmonic Analysis in Applied Sciences

Verlag: Birkhäuser Boston

Aktivieren Sie unsere intelligente Suche um passende Fachinhalte oder Patente zu finden.

search-config
loading …

When modeling steady potential flow problems in polygonal non-convex domains, it is expected to find singularities being develop at the corners. The asymptotic behavior of these singularities in reentering corners depends on the boundary data, on the corner angle and on the permittivity constants associated with the potential equation when modeling inhomogeneous media.

Metadaten
Titel
Higher order asymptotic boundary conditions for an oxide region in a semiconductor device
verfasst von
Irene M. Gamba
Copyright-Jahr
1997
Verlag
Birkhäuser Boston
DOI
https://doi.org/10.1007/978-1-4612-2010-7_12