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A highly linear high-frequency low-noise amplifier is one of the important components in telecommunication receivers. The purpose of making such amplifiers is to amplify received signal from transmitter (antenna) at an acceptable level. A narrow band highly linear low-noise amplifier was studied and designed in this paper. A BFP720 bipolar transistor from Infineon Company associated with ADS software was used. Low-noise amplifier was initially designed and simulated and its results were obtained. Lumped elements of inductor and capacitor were used in the design of input and output matching network of this circuit, and two amplifier circuits were then designed and some techniques and methods proposed to improve its performance.
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- Highly Linear High-Frequency Low-Noise Amplifier Design at ISM Band
Seyyed Jafar Zareian-Jahromi
- Springer US
Wireless Personal Communications
An International Journal
Print ISSN: 0929-6212
Elektronische ISSN: 1572-834X
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