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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 15/2020

16.06.2020

Highly luminescence CdTe/ZnSe core–shell QDs; synthesis by a simple low temperature approach

verfasst von: F. Farahmandzadeh, M. Molaei, M. Karimipour, A. R. Shamsi

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 15/2020

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Abstract

Highly luminescence CdTe/ZnSe core–shell QDs were produced by growth of the ZnSe shell using a simple, rapid, and low temperature photochemical approach around microwave synthesized CdTe QDs. Synthesized QDs were characterized by means of XRD, FESEM, HRTEM, EDAX, Raman, UV–Vis, and PL analysis. XRD, Raman, EDAX, and HRTEM analyses confirmed successful formation of ZnSe shell around CdTe QDs. CdTe QDs indicated a green band edge emission with a peak at about 535 nm. PL quantum yield (QY) was increased significantly from about 20% for CdTe to about 50% for CdTe/ZnSe QDs. The shell thickness was tunable simply only by UV-illumination time in the ZnSe shell growth step which resulted in the shift of the PL peak from 535 nm (green) to about 640 nm (red).
Vorheriger Artikel Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors
Nächster Artikel Influence of Ag doping on room-temperature TCR of La0.67Sr0.33−xAgxMnO3 polycrystalline ceramics

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Metadaten
Titel
Highly luminescence CdTe/ZnSe core–shell QDs; synthesis by a simple low temperature approach
verfasst von
F. Farahmandzadeh
M. Molaei
M. Karimipour
A. R. Shamsi
Publikationsdatum
16.06.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 15/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03784-y

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