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Journal of Materials Science
Erschienen in: Journal of Materials Science 19/2016

01.10.2016 | Original Paper

Hopping conduction and LF noise in structures with Ge nanoclusters grown on oxidized Si(001)

verfasst von: V. S. Lysenko, Y. V. Gomeniuk, V. N. Kudina, N. P. Garbar, S. V. Kondratenko, Ye. Ye. Melnichuk, Y. N. Kozyrev

Erschienen in: Journal of Materials Science | Ausgabe 19/2016

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Abstract

Conductivity, capacitance, and the low-frequency noise in structures with Ge nanoclusters grown on oxidized Si(001) have been investigated for the temperature range of 120–290 K and frequencies from 1 kHz to 1 MHz in co-planar geometry. The Mott’s variable range hopping through quasi-band of localized states at the Fermi level of nanoclusters and their interfaces was found to be the dominant transport mechanism in the surface conductivity channel. The quasi-band width was found to be about 110 meV, while the middle is located at E v + 140 meV. The maximum of reduced conductivity and capacitance were observed under conditions when Fermi level is in the middle of this band. A significant increase of the 1/f noise level with decreasing temperature found for the structures studied was ascribed to accompany hopping transport of charge carriers within the quasi-band with a high density of localized states.
Vorheriger Artikel One-step synthesis of hydrophobic-reduced graphene oxide and its oil/water separation performance
Nächster Artikel Scratch defects modulated hot spots generation in laser irradiated RDX crystals: a 3D FDTD simulation

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Metadaten
Titel
Hopping conduction and LF noise in structures with Ge nanoclusters grown on oxidized Si(001)
verfasst von
V. S. Lysenko
Y. V. Gomeniuk
V. N. Kudina
N. P. Garbar
S. V. Kondratenko
Ye. Ye. Melnichuk
Y. N. Kozyrev
Publikationsdatum
01.10.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 19/2016
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-016-0071-9

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