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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2019

21.11.2018

Hopping parameters for tunnel coupling in 2D materials

verfasst von: V. L. Katkov, D. A. Lobanov

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2019

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Abstract

Using Bardeen’s approach and orbital wave functions obtained by the algorithm of Herman and Skillman, we calculated interatomic matrix elements for tunnel interaction between the atoms from the set of B, C, N, Si, P, S, Ti, V, Se, Mo, Te and W, which constitute many 2D materials. In a wide range of interatomic distances, these values are approximated by simple functions with a small set of parameters. The results are presented in reference tables. These results will be useful for describing different tunnel phenomena in low-dimensional materials using the tight-binding approach.
Vorheriger Artikel Numerical study on the field-emission properties of a graphene–C60 composite
Nächster Artikel Performance analysis of a substrate-engineered monolayer MoS2 field-effect transistor

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Literatur
1.
Binnig, G., Rohrer, H.: Scanning tunneling microscopy. IBM J. Res. Dev. 44, 279 (2000)CrossRef
2.
Binnig, G., Rohrer, H., Gerber, C., Weibel, E.: Surface studies by scanning tunneling microscopy. Phys. Rev. Lett. 49, 57 (1982)CrossRef
3.
Binnig, G., Rohrer, H., Gerber, C., Weibel, E.: Tunneling through a controllable vacuum gap. Appl. Phys. Lett. 40, 178 (1982)CrossRef
4.
Hofer, W.A., Foster, A.S., Shluger, A.L.: Theories of scanning probe microscopes at the atomic scale. Rev. Mod. Phys. 75, 1287 (2003)CrossRef
5.
Alferov, Z.I.: The history and future of semiconductor heterostructures. Semiconductors 32, 1 (1998)CrossRef
6.
Geim, A.K., Grigorieva, I.V.: Van der Waals heterostructures. Nature 499, 419 (2013)CrossRef
7.
Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., Firsov, A.A.: Electric field effect in atomically thin carbon films. Science 306, 666 (2004)CrossRef
8.
Pacilé, D., Meyer, J.C., Girit, C.O., Zettl, A.: The two-dimensional phase of boron nitride: few-atomic-layer sheets and suspended membranes. Appl. Phys. Lett. 92, 133107 (2008)CrossRef
9.
Li, L., Yu, Y., Ye, G.J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X.H., Zhang, Y.: Black phosphorus field-effect transistors. Nat. Nano 9, 372 (2014)CrossRef
10.
Koenig, S.P., Doganov, R.A., Schmidt, H., Castro Neto, A.H., Ozyilmaz, B.: Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 104, 103106 (2014)CrossRef
11.
Low, T., Engel, M., Steiner, M., Avouris, P.: Origin of photoresponse in black phosphorus phototransistors. Phys. Rev. B 90, 081408 (2014)CrossRef
12.
Liu, H., Neal, A.T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., Ye, P.D.: Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033 (2014)CrossRef
13.
Lu, W., Nan, H., Hong, J., Chen, Y., Zhu, C., Liang, Z., Ma, X., Ni, Z., Jin, C., Zhang, Z.: Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization. Nano Res. 7, 853 (2014)CrossRef
14.
Xia, F., Wang, H., Jia, Y.: Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014)CrossRef
15.
Lalmi, B., Oughaddou, H., Enriquez, H., Kara, A., Vizzini, S., Ealet, B., Aufray, B.: Epitaxial growth of a silicene sheet. Appl. Phys. Lett. 97, 223109 (2010)CrossRef
16.
Wang, Q.H., Kalantar-Zadeh, K., Kis, A., Coleman, J.N., Strano, M.S.: Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nano 7, 699 (2012)CrossRef
17.
Slater, J.C., Koster, G.F.: Simplified LCAO method for the periodic potential problem. Phys. Rev. 94, 1498 (1954)CrossRefMATH
18.
Elstner, M., Porezag, D., Jungnickel, G., Elsner, J., Haugk, M., Frauenheim, T., Suhai, S., Seifert, G.: Self-consistent-charge density-functional tight-binding method for simulations of complex materials properties. Phys. Rev. B 58, 7260 (1998)CrossRef
19.
Khalili, K., Penazzi, G., Frauenheim, T.: The spectral adjustment in nanoscale transport combined with the density functional based tight binding method. Comput. Mater. Sci. 133, 14 (2017)CrossRef
20.
Berthod, C., Giamarchi, T.: Tunneling conductance and local density of states in tight-binding junctions. Phys. Rev. B 84, 155414 (2011)CrossRef
21.
Trushkov, I., Iorsh, I.: Two-dimensional hyperbolic medium for electrons and photons based on the array of tunnel-coupled graphene nanoribbons. Phys. Rev. B 92, 045305 (2015)CrossRef
22.
Hawke, L.G.D., Kalosakas, G., Simserides, C.: Electronic parameters for charge transfer along DNA. Eur. Phys. J. E 32, 291 (2010)CrossRef
23.
Isaeva, O.G., Katkov, V.L., Osipov, V.A.: DNA sequencing through graphene nanogap: a model of sequential electron transport. Eur. Phys. J. B 87, 272 (2014)CrossRef
24.
Katkov, V.L., Osipov, V.A.: Graphene-based tunnel junction. JETP Lett. 98, 689 (2014)CrossRef
25.
Katkov, V.L., Osipov, V.A.: Planar graphene tunnel field-effect transistor. Appl. Phys. Lett. 104, 053102 (2014)CrossRef
26.
Glebov, A.A., Katkov, V.L., Osipov, V.A.: Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor. EPL (Europhys. Lett.) 118, 27003 (2017)CrossRef
27.
Katkov, V.L., Osipov, V.A.: Review Article: Tunneling-based graphene electronics: methods and examples. J. Vac. Sci. Technol. B 35, 050801 (2017)CrossRef
28.
Meunier, V., Lambin, P.: Tight-binding computation of the STM image of carbon nanotubes. Phys. Rev. Lett. 81, 5588 (1998)CrossRef
29.
Settnes, M., Power, S.R., Petersen, D.H., Jauho, A.-P.: Phys. Rev. Lett. 112, 096801 (2014)CrossRef
30.
Mathon, J.: Tight-binding theory of tunneling giant magnetoresistance. Phys. Rev. B 56, 11810 (1997)CrossRef
31.
Wahiduzzaman, M., Oliveira, A.F., Philipsen, P., Zhechkov, L., van Lenthe, E., Witek, H.A., Heine, T.: DFTB parameters for the periodic table: part 1. Electronic structure. J. Chem. Theory Comput. 9, 4006 (2013)CrossRef
32.
Bardeen, J.: Tunnelling from a many-particle point of view. Phys. Rev. Lett. 6, 57 (1961)CrossRef
33.
Paz, O., Brihuega, I., Gómez-Rodríguez, J.M., Soler, J.M.: Tip and surface determination from experiments and simulations of scanning tunneling microscopy and spectroscopy. Phys. Rev. Lett. 94, 056103 (2005)CrossRef
34.
Martìn-Rodero, A., Flores, F., March, N.H.: Tight-binding theory of tunneling current with chemisorbed species. Phys. Rev. B 38, 10047 (1988)CrossRef
35.
Herman, F., Skillman, S.: Atomic Structure Calculations. Prentice-Hall, Upper Saddle River (1963)
36.
Slater, J.C.: Statistical exchange-correlation in the self-consistent field. Adv. Quantum Chem. 6, 1 (1972)CrossRef
37.
Zope, R.R., Dunlap, B.I.: Slater’s exchange parametersfor analytic and variationalcalculations. J. Chem. Theory Comput. 1, 1193 (2005)CrossRef
38.
Schwarz, K.: Optimization of the statistical exchange parameter \(\alpha \) for the free atoms H through Nb. Phys. Rev. B 5, 2466 (1972)CrossRef
39.
Schwarz, K.: Optimized statistical exchange parameters for atoms with higher Z. Theor. Chim. Acta 34, 225 (1974)CrossRef
40.
41.
Ooi, N., Rairkar, A., Lindsley, L., Adams, J.B.: Electronic structure and bonding in hexagonal boron nitride. J. Phys. Condens. Matter 18, 97 (2006)CrossRef
42.
Li, P., Appelbaum, I.: Electrons and holes in phosphorene. Phys. Rev. B 90, 115439 (2014)CrossRef
43.
Cahangirov, S., Topsakal, M., Aktürk, E., Sahin, H., Ciraci, S.: Two-and one-dimensional honeycomb structures of silicon and germanium. Phys. Rev. Lett. 102, 236804 (2009)CrossRef
44.
Amara, H., Latil, S., Meunier, V., Lambin, P., Charlier, J.-C.: Scanning tunneling microscopy fingerprints of point defects in graphene: a theoretical prediction. Phys. Rev. B 76, 115423 (2007)CrossRef
Metadaten
Titel
Hopping parameters for tunnel coupling in 2D materials
verfasst von
V. L. Katkov
D. A. Lobanov
Publikationsdatum
21.11.2018
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2019
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-018-1281-y

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