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Erschienen in:
2019 | OriginalPaper | Buchkapitel
IGBT Devices, Thermal Modeling Using FEM
verfasst von : Sonia Hosseinpour, Mahmoud Samiei Moghaddam
Erschienen in: Fundamental Research in Electrical Engineering
Verlag: Springer Singapore
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Abstract
Thermal control and modeling of transistor devices, and especially IGBT transistors, are of interest to many researchers today. Managing thermal devices These transistors can have a significant impact on energy consumption. Considering the importance of the subject, in this research, the FEM method is used to model the thermal devices of IGBT transistors. By simulating the proposed method in this study, it was observed that the proposed method significantly improved the aspects of wasted energy during switching on and off IGBT transistors at different temperatures.