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Erschienen in:
Power Semiconductor Devices—Key Components for Efficient Electrical Energy Conversion Systems Kapitel lesen Erstes Kapitel lesen

2018 | OriginalPaper | Buchkapitel

10. IGBTs

verfasst von : Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker

Erschienen in: Semiconductor Power Devices

Verlag: Springer International Publishing

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A lot of work was spent to combine bipolar devices with their superior current density with the possibility of voltage-control as given in MOSFETs. Early works tried to combine thyristor-related structures with MOS gate control. However, a transistor-based device won the race. Plummer and Scharf from Stanford University California [Plu80, Scf78] worked on planar MOS controlled TRIACs, they discussed an intermediate bipolar state as a step before the intended thyristor mode. They even mentioned a kink in the characteristics toward better conductivity and showed a measured IGBT-like I–V characteristics. However, the final aim was thyristor mode. The Insulated Gate Bipolar Transistor (IGBT) was invented in the United States of America by F. Wheatley and H. Becke from RCA Corporation in U.S. [Bec80]. The patent clearly points out “Although this creates a four layer device, the conductivities and geometries of the four semiconductor regions are manipulated so as not to form a regenerative thyristor”. In 1982, the same year as said patent was published, the first experimental demonstration of a practical discrete vertical IGBT device was reported by Baliga et al. from GE [Bal82], and the advantage of a 10 times higher current density compared and MOSFET and two times compared to the bipolar transistor was shown. Also Russel et al. from RCA submitted a paper describing the IGBT in the end of 1982 [Rus83]. The IGBT was firstly referred to as COMFET (Conductivity Modulated FET) [Rog88, Rus83], also the term IGT (Insulated Gate Transistor) [Bal83] was used. A report on the first story of the IGBT is given in [She15]. A description of the technical details leading to a mature device is made in [Iwa17]. …

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Vorheriges Kapitel MOS Transistors and Field Controlled Wide Bandgap Devices
Nächstes Kapitel Packaging of Power Devices
Fußnoten
1
Equation (10.9) is usually derived for low injection. The considerations, however, will also be valid for high injection, qualitatively.
 
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Metadaten
Titel
IGBTs
verfasst von
Josef Lutz
Heinrich Schlangenotto
Uwe Scheuermann
Rik De Doncker
Copyright-Jahr
2018
Buch
Semiconductor Power Devices

Print ISBN: 978-3-319-70916-1

Electronic ISBN: 978-3-319-70917-8

Copyright-Jahr: 2018

DOI
https://doi.org/10.1007/978-3-319-70917-8_10

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