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Erschienen in: Microsystem Technologies 10/2020

20.11.2017 | Technical Paper

Impact of aspect ratio of nanoscale hybrid p-Ge/n-Si complementary FinFETs on the logic performance

verfasst von: Kallolini Banerjee, Suchismita Tewari, Abhijit Biswas

Erschienen in: Microsystem Technologies | Ausgabe 10/2020

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Abstract

We investigate the effect of aspect ratio (AR) with a given fin width (Wfin) of hybrid FinFETs at channel length of 20 nm on their digital performance using extensive numerical device and circuit simulations. The hybrid complementary FinFETs (HCFF), consist of Si channel n-FinFETs and Ge channel p-FinFETs and the performance is gauged in terms of device gain, noise margins (NMs), rise time (tr), fall time (tf) and propagation delay (td). Our findings reveal that tr and NM for our proposed HCFF inverter exhibit significant improvements of 37.31 and 8.03% compared to its corresponding Si value at aspect ratio of 5. Furthermore, the frequency of oscillations (fosc) of a nine-stage ring oscillator built using HCFF inverters shows 95.17% improvement with respect to that obtained with its equivalent Si counterpart at AR = 5 and supply voltage = 0.5 V.

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Metadaten
Titel
Impact of aspect ratio of nanoscale hybrid p-Ge/n-Si complementary FinFETs on the logic performance
verfasst von
Kallolini Banerjee
Suchismita Tewari
Abhijit Biswas
Publikationsdatum
20.11.2017
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 10/2020
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-017-3633-0

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