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Journal of Computational Electronics

Erschienen in:

21.09.2016

Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors

verfasst von: Marco G. Pala, Corentin Grillet, Jiang Cao, Demetrio Logoteta, Alessandro Cresti, David Esseni

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2016

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Abstract

We study the impact of electron–phonon interaction on the subthreshold operation region of Tunnel-FETs by means of full-quantum simulations. Our approach is based on the nonequilibrium Green’s function method, where acoustic and optical phonon scatterings are taken into account through the self-consistent Born approximation. Two device architectures are analyzed: InAs nanowire longitudinal Tunnel-FETs, and 2D vertical Tunnel-FETs based on either an GaSb/AlSb/InAs heterostructure or a MoS\(_2\)/WTe\(_2\) van der Waals heterojunction. In InAs nanowire Tunnel-FETs with interface traps, electron–phonon interaction deteriorates the subthreshold swing by allowing trap-assisted tunneling at energies higher than the valence-band edge in the source. In vertical heterojunction Tunnel-FETs, optical phonon scattering increases the OFF current by inducing inelastic transition in the overlap region even in the absence of traps.

Vorheriger Artikel On the local approximation of the electron–photon interaction self-energy

Nächster Artikel Atomistic tight-binding computations in the new class of CdSe/AlP II–VI core/III–V shell nanocrystals

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Titel: Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
verfasst von: Marco G. Pala
Corentin Grillet
Jiang Cao
Demetrio Logoteta
Alessandro Cresti
David Esseni
Publikationsdatum: 21.09.2016
Verlag: Springer US
Erschienen in: Journal of Computational Electronics / Ausgabe 4/2016
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-016-0900-8

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