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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 1/2016

09.10.2015

Improved near-infrared up-conversion emission of YAG:Yb,Tm phosphor substituted by Gallium and Indium

verfasst von: Qian Liu, Wei Zhang, Zheng-fa Hu, Zu-yong Feng, Lun Ma, Xiu-ping Zhang, Xia Sheng, Jie Luo

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2016

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Abstract

Gallium–Indium co-substituted yttrium aluminum garnet (YAG:Yb,Tm) phosphors were synthesized by co-precipitation method. It can be seen that gallium and indium ions co-substitution didn’t change the phase of YAG. The upconversion luminescence (UCL) properties of the Gallium–Indium co-substituted (YAG:Yb,Tm) samples were measured under 980 nm excitation. The effects of different In3+concentration on the luminescence properties of Gallium–Indium co-substituted (YAG:Yb,Tm) were also investigated. The fluorescence-lifetime investigation shows that the substitution of Ga3+ and In3+ has a significant influence on energy transfer between Yb3+ and Tm3+ in the YAG samples.
Vorheriger Artikel Through-hole filling characteristics of solderable polymer composites with low melting point alloy fillers
Nächster Artikel Preparation of nanocrystalline praseodymium oxide with different shapes via a simple thermal decomposition route

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Metadaten
Titel
Improved near-infrared up-conversion emission of YAG:Yb,Tm phosphor substituted by Gallium and Indium
verfasst von
Qian Liu
Wei Zhang
Zheng-fa Hu
Zu-yong Feng
Lun Ma
Xiu-ping Zhang
Xia Sheng
Jie Luo
Publikationsdatum
09.10.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 1/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3843-0

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