Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Bücher
Zeitschriften
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
SLX-Digitalkonferenz: Zukunftswerkstatt 2024

Mehr Umsatz mit Top-Kontakten

Am 7. Mai erfahren Sie, wie Vertriebsteams Leadgenerierung, Leadnurturing und Leadstrategien effizient steuern können.
Erweiterte Suche
Anmelden
nach oben
Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 19/2018

02.08.2018

Improvement of thermal stability of antimony film by cerium addition for phase change memory application

verfasst von: Jianhao Zhang, Hua Zou, Yifeng Hu, Xiaoqin Zhu, Yuemei Sun, Zhitang Song

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 19/2018

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Compared with pure Antimony (Sb) materials, Cerium (Ce) doped Sb alloys is proved to be a promising candidate with better thermal stability for phase change memory application. In this paper, the Ce doped Sb films were synthesized by magnetron sputtering. The crystallization temperature (Tc), activation energy (Ea) and the temperature for 10 years data retention (Tten) all increased significantly by increasing Ce dopants, meaning a much better thermal stability. These results may ascribe to disturbing crystallization process from the existence of Ce–Sb bond.
Vorheriger Artikel Effects of annealing process and the additive on the electrical properties of chemical solution deposition derived 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thin films
Nächster Artikel Low temperature sintering and microwave dielectric properties of Li2ZnTi3O8–TiO2 ceramics doped with BaO–B2O3–ZnO glass

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Jetzt informieren
Literatur
1.
X. Zhou, J.K. Behera, S. Lv, L. Wu, Z. Song, R.E. Simpson, Avalanche atomic switching in strain engineered Sb2Te3–GeTe interfacial phase-change memory cells. Nano Fut. 1, 025003 (2017)CrossRef
2.
T.H. Lee, D. Loke, S.R. Elliott, Microscopic mechanism of doping-induced kinetically constrained crystallization in phase-change materials. Adv. Mater. 27, 5477–5483 (2015)CrossRef
3.
M. Schumacher, H. Weber, P. Jovari, Y. Tsuchiya, T.G. Youngs, I. Kaban, R. Mazzarello, Structural, electronic and kinetic properties of the phase-change material Ge2Sb2Te5 in the liquid state. Sci. Rep. 6, 27434 (2016)CrossRef
4.
A. Wang, C. Wang, L. Fu, W. Wong-Ng, Y. Lan, Recent advances of graphitic carbon nitride-based structures and applications in catalyst, sensing, imaging, and LEDs. Nano-Micro Lett. 9, 47 (2017)CrossRef
5.
H. Nakamura, I. Rungger, S. Sanvito, N. Inoue, J. Tominaga, Y. Asai, Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states. Nanoscale 9, 9386–9395 (2017)CrossRef
6.
R. Liu, Z. He, J. Zhai, S. Song, Z. Song, X. Zhou, Ultra-high speed and low-power superlattice-like Sn18Sb82–SnSe2 thin films for phase change memory applications. Mater. Lett. 163, 20–23 (2016)CrossRef
7.
Y. Zheng, Y. Cheng, R. Huang, R. Qi, F. Rao, K. Ding, W. Yin, S. Song, W. Liu, Z. Song, S. Feng, Surface energy driven cubic-to-hexagonal grain growth of Ge2Sb2Te5 thin film. Sci. Rep. 7, 5915 (2017)CrossRef
8.
Y. Hu, H. Zou, J. Zhang, J. Xue, Y. Sui, W. Wu, L. Yuan, X. Zhu, S. Song, Z. Song, Ge2Sb2Te5/Sb superlattice-like thin film for high speed phase change memory application. Appl. Phys. Lett. 107, 263105 (2015)CrossRef
9.
H. Wang, G. Wang, Y. Chen, X. Shen, Y. Lv, Q. Nie, Advantages of Mo4.9(Sb2Te)95.1 film with improved crystallization properties for phase change memory. Mater. Lett. 161, 240–243 (2015)CrossRef
10.
F. Rao, Z. Song, K. Ren, X. Li, L. Wu, W. Xi, B. Liu, Sn12Sb88 material for phase change memory. Appl. Phys. Lett. 95, 032105 (2009)CrossRef
11.
G. Eising, T. Van Damme, B.J. Kooi, Unraveling crystal growth in GeSb phase-change films in between the glass-transition and melting temperatures. Cryst. Growth Des. 14, 3392–3397 (2014)CrossRef
12.
Y. Hu, H. Zou, L. Yuan, J. Xue, Y. Sui, W. Wu, J. Zhang, X. Zhu, S. Song, Z. Song, Improved phase change behavior of Sb2Se material by Si addition for phase change memory. Scr. Mater. 115, 19–23 (2016)CrossRef
13.
M. Putero, M.-V. Coulet, C. Muller, C. Baehtz, S. Raoux, H.-Y. Cheng, Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories. Appl. Phys. Lett. 108, 101909 (2016)CrossRef
14.
Y. Lu, S. Song, Z. Song, B. Liu, Ga14Sb86 film for ultralong data retention phase-change memory. J. Appl. Phys. 109, 064503 (2011)CrossRef
15.
X. Yu, Y. Zhao, C. Li, C. Hu, L. Ma, S. Fan, Y. Zhao, N. Min, S. Tao, Y. Wang, Improved multi-level data storage properties of germanium-antimony-tellurium films by nitrogen doping. Scr. Mater. 141, 120–124 (2017)CrossRef
16.
Z. Li, Y. Hu, T. Wen, J. Zhai, T. Lai, Femtosecond laser-induced crystallization of amorphous N-doped Ge8Sb92 films and in situ characterization by coherent phonon spectroscopy. J. Appl. Phys. 117, 135703 (2015)CrossRef
17.
X. Zhu, Y. Hu, H. Zou, Y. Sui, J. Xue, D. Shen, J. Zhang, S. Song, Z. Song, S. Sun, Influence of N-doping on the thermal stability and switching speed of Zn15Sb85 phase change material. J. Mater. Sci.: Mater. Electron. 26, 1212–1216 (2014)
18.
Z. Li, C. Si, J. Zhou, H. Xu, Z. Sun, Yttrium-doped Sb2Te3: a promising material for phase-change memory. ACS Appl. Mater. Interfaces 8, 26126–26134 (2016)CrossRef
19.
J.H. Park, S.W. Kim, J.H. Kim, D.H. Ko, Z. Wu, D. Ahn, D.H. Ahn, J.M. Lee, S.B. Kang, S.Y. Choi, Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film. AIP Adv. 6, 025013 (2016)CrossRef
20.
H.S. Kim, Y.T. Kim, H.S. Hwang, M.Y. Sung, The effect of carbon-doped In3Sb1Te2 ternary alloys for multibit (MLC) phase-change memory. Phys. Status Solidi (RRL)—Rapid Res. Lett. 8, 243–247 (2014)CrossRef
21.
Y. Sun, Y. Hu, X. Zhu, H. Zou, Y. Sui, J. Xue, L. Yuan, J. Zhang, L. Zheng, D. Zhang, Z. Song, O-doped Sb70Se30 phase-change materials for high thermal stability and fast speed. J. Electron. Mater. 46, 6811–6816 (2017)CrossRef
22.
Y. Sun, X. Wang, J. Du, N. Chen, H. Yu, Q. Wu, X. Meng, Amorphous structure and bonding chemistry of aluminium antimonide (AlSb) alloy for phase-change memory device. Chem. Res. Chin. Univ. 32, 76–81 (2016)CrossRef
23.
W. Wu, S. Chen, J. Zhai, Study on the physical properties and structure of titanium antimony thin films for phase change memory application. J. Mater. Sci. 52, 11598–11607 (2017)CrossRef
24.
T. Guo, S. Song, L. Li, L. Shen, B. Wang, B. Liu, Z. Song, M. Qi, S. Feng, Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications. Mater. Lett. 169, 203–206 (2016)CrossRef
25.
Y. Zheng, Y. Cheng, M. Zhu, X. Ji, Q. Wang, S. Song, Z. Song, W. Liu, S. Feng, A candidate Zr-doped Sb2Te alloy for phase change memory application. Appl. Phys. Lett. 108, 052107 (2016)CrossRef
26.
H. Zou, Y. Hu, X. Zhu, Y. Sun, L. Zheng, Y. Sui, S. Wu, Z. Song, Improvement in reliability and power consumption based on Ge10Sb90 films through erbium doping. J. Mater. Sci. 52, 5216–5222 (2017)CrossRef
27.
H. Zou, X. Zhu, Y. Hu, Y. Sui, W. Wu, J. Xue, L. Zheng, Z. Song, Improvement of the thermal stability of Sb thin film through erbium doping. CrystEngComm 18, 6365–6369 (2016)CrossRef
28.
H. Zou, X. Zhu, Y. Hu, Y. Sui, Y. Sun, J. Zhang, L. Zheng, Z. Song, Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping. J. Appl. Phys. 120, 245303 (2016)CrossRef
29.
Y. Hu, X. Zhu, H. Zou, J. Zhang, L. Yuan, J. Xue, Y. Sui, W. Wu, S. Song, Z. Song, Improved thermal stability of N-doped Sb materials for high-speed phase change memory application. Appl. Phys. Lett. 108, 223103 (2016)CrossRef
30.
L. Fu, X. Xiao, A. Wang, Reduced graphene oxide coupled with g-C3N4 nanodots as 2D/0D nanocomposites for enhanced photocatalytic activity. J. Phys. Chem. Solids 122, 104–108 (2018)CrossRef
31.
Y.G. Lu, S.N. Song, Z.T. Song, F. Rao, L.C. Wu, M. Zhu, B. Liu, D.N. Yao, Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications. Appl. Phys. Lett. 100, 193114 (2012)CrossRef
32.
Y. Hu, X. Zhu, H. Zou, Y. Lu, J. Xue, Y. Sui, W. Wu, L. Yuan, S. Song, Z. Song, Alx(Sn2Se3)1–x phase change films for high-temperature data retention and fast transition speed application. J. Mater. Sci.: Mater. Electron. 26, 7757–7762 (2015)
33.
Z. He, P. Wu, R. Liu, J. Zhai, T. Lai, S. Song, Z. Song, Superlattice-like SnSb4/Ge thin films for ultra-high speed phase change memory applications. CrystEngComm 18, 1230–1234 (2016)CrossRef
34.
S.Y. Lee, H.K. Kim, J.H. Kim, J.S. Roh, D.J. Choi, Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications. J. Mater. Sci. 44, 4354–4359 (2009)CrossRef
35.
T. Nakamura, T. Suemasu, K. Takakura, F. Hasegawa, A. Wakahara, M. Imai, Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations. Appl. Phys. Lett. 81, 1032–1034 (2002)CrossRef
Metadaten
Titel
Improvement of thermal stability of antimony film by cerium addition for phase change memory application
verfasst von
Jianhao Zhang
Hua Zou
Yifeng Hu
Xiaoqin Zhu
Yuemei Sun
Zhitang Song
Publikationsdatum
02.08.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 19/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9796-3

Weitere Artikel der Ausgabe 19/2018

Journal of Materials Science: Materials in Electronics 19/2018 Zur Ausgabe

OriginalPaper

Humidity sensing properties of fluorine doped zinc oxide thin films

OriginalPaper

Structural, electrical and thermal studies on microwave sintered Dy and Pr co-doped ceria ceramics as electrolytes for intermediate temperature solid oxide fuel cells

OriginalPaper

Study on thermal conductive epoxy adhesive based on adopting hexagonal boron nitride/graphite hybrids

OriginalPaper

Enhanced breakdown strength and energy density of PVDF composites by introducing boron nitride nanosheets

OriginalPaper

Effect of ZnO layer thickness upon optoelectrical properties of NiO/ ZnO heterojunction prepared at room temperature

OriginalPaper

Dielectrical and structural studies of composite matrix BiVO4–CaTiO3 and temperature effects by impedance spectroscopy

Neuer Inhalt

    Bildnachweise