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Erschienen in: Journal of Materials Science: Materials in Electronics 23/2019

08.11.2019

Improvement of UV photodetector properties of reactively sputtered TiO2−x films through vacuum annealing

verfasst von: Y. Ashok Kumar Reddy, B. Ajitha, Maddaka Reddeppa, Adem Sreedhar

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 23/2019

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Abstract

We present the influence of vacuum annealing on RF magnetron-sputtered TiO2−x thin films grown at various oxygen partial pressures (\(p_{{{\text{O}}_{2} }}\)) of 2.0%, 4.0% and 6.0% to enhance the ultra-violet (UV) photodetector performance. Apart from the film deposited at 2.0% of \(p_{{{\text{O}}_{2} }}\), all the as-grown TiO2−x films show an amorphous nature, whereas thermally annealed TiO2−x films at 400 °C show the rutile phase. As revealed by the linear current–voltage characteristics, the ohmic-contact behavior was observed between the TiO2−x layer and the electrode material. Benefiting from the above features, the photocurrent was significantly increased at 4.0% of \(p_{{{\text{O}}_{2} }}\) due to the increase of oxygen vacancies and the suppression of electron–hole recombination. As a result, thermally annealed TiO2−x films are very useful for next-generation UV-photodetectors even at a lower power density of 1.72 mW/cm2. Therefore, the merits of the above findings present a promising strategy to enhance the UV photoresponse of thermally annealed TiO2−x films by optimizing the \(p_{{{\text{O}}_{2} }}\) at 4.0%.

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Metadaten
Titel
Improvement of UV photodetector properties of reactively sputtered TiO2−x films through vacuum annealing
verfasst von
Y. Ashok Kumar Reddy
B. Ajitha
Maddaka Reddeppa
Adem Sreedhar
Publikationsdatum
08.11.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 23/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02434-2

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