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Erschienen in: Journal of Materials Science: Materials in Electronics 7/2016

24.03.2016

In situ etching of graphene by nonmetallic SiOx nanoparticles

verfasst von: Dongjiu Zhang, Haifeng Cheng, Zhaoyang Zhang, Yue Kang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 7/2016

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Abstract

This paper introduced a general method of etching suspended graphene by nonmetallic SiOx nanoparticles (SiOx NPs) in graphene synthesis. Effects of etching time, concentration of silica gel and type of graphene on the etching mode of graphene have been systematically considered with using as-grown graphene film on a silica gel coating copper as model system. Nonmetallic SiOx NPs acted as etchant plays important role in the in situ etching process during the fabrication of graphene. The etched multilayer graphene pattern can be modulated from large area films to a rectangle pattern by varying the Si concentration and etching time, while single layer graphene pattern alters little. The morphology and critical structure of SiOx etched graphene were characterized by Raman spectra, transmission electron microscopy, scanning electron microscope and X-ray photoelectron spectrum. The process and mechanism described here open the way for tailoring graphene via nanoparticles instead of metal, which show significant influence of the electrical properties of graphene.

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Metadaten
Titel
In situ etching of graphene by nonmetallic SiOx nanoparticles
verfasst von
Dongjiu Zhang
Haifeng Cheng
Zhaoyang Zhang
Yue Kang
Publikationsdatum
24.03.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 7/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-4693-0