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2015 | OriginalPaper | Buchkapitel

5. Industrial Implications of Electromigration-Induced Plasticity in Cu Interconnects: Plasticity-Amplified Diffusivity

verfasst von : Arief Suriadi Budiman

Erschienen in: Probing Crystal Plasticity at the Nanoscales

Verlag: Springer Singapore

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Abstract

The theoretical analysis of the diffusion in interconnects during the electromigration is performed in this chapter. Two main diffusion paths are compared: grain boundaries and electromigration induced dislocations. The electromigration induced dislocations are formed due to the crystal bending, described in the previous chapters, and form a short diffusion path in the direction of the current. These two possible diffusion paths can lead to the significantly different device failure time dependence on the current density. This can lead to an important implication for the way device lifetime/reliability is assessed.

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Literatur
1.
Zurück zum Zitat Budiman AS, Hau-Riege CS, Besser PR et al (2007) Plasticity-amplified diffusivity: dislocation cores as fast diffusion paths in Cu interconnects. In: 45th annual IEEE international reliability physics symposium proceedings, Phoenix, 15–19 Apr 2007 Budiman AS, Hau-Riege CS, Besser PR et al (2007) Plasticity-amplified diffusivity: dislocation cores as fast diffusion paths in Cu interconnects. In: 45th annual IEEE international reliability physics symposium proceedings, Phoenix, 15–19 Apr 2007
2.
Zurück zum Zitat Budiman AS, Tamura N, Valek BC et al (2006) Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron X-ray microdiffraction. Appl Phys Lett 88:233515CrossRef Budiman AS, Tamura N, Valek BC et al (2006) Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron X-ray microdiffraction. Appl Phys Lett 88:233515CrossRef
3.
Zurück zum Zitat Budiman AS, Tamura N, Valek BC et al. (2006) Electromigration-induced plastic deformation in Cu damascene interconnect lines as revealed by synchrotron X-ray microdiffraction. Mat Res Soc Proc 914 Budiman AS, Tamura N, Valek BC et al. (2006) Electromigration-induced plastic deformation in Cu damascene interconnect lines as revealed by synchrotron X-ray microdiffraction. Mat Res Soc Proc 914
4.
Zurück zum Zitat Valek BC, Bravman JC, Tamura N et al (2002) Electromigration-induced plastic deformation in passivated metal lines. Appl Phys Lett 81:4168–4170CrossRef Valek BC, Bravman JC, Tamura N et al (2002) Electromigration-induced plastic deformation in passivated metal lines. Appl Phys Lett 81:4168–4170CrossRef
5.
Zurück zum Zitat Valek BC, Tamura N, Spolenak R et al (2003) Early stage of plastic deformation in thin films undergoing electromigration. J Appl Phys 94:3757–3761CrossRef Valek BC, Tamura N, Spolenak R et al (2003) Early stage of plastic deformation in thin films undergoing electromigration. J Appl Phys 94:3757–3761CrossRef
6.
Zurück zum Zitat Tamura N, MacDowell AA, Spolenak BC et al (2003) Scanning X-ray microdiffraction with submicrometer white beam for strain/stress and orientation mapping in thin films. J Synchrotron Radiat 10:137–143CrossRef Tamura N, MacDowell AA, Spolenak BC et al (2003) Scanning X-ray microdiffraction with submicrometer white beam for strain/stress and orientation mapping in thin films. J Synchrotron Radiat 10:137–143CrossRef
7.
Zurück zum Zitat Baker SP, Joo YC, Knaub MP et al (2000) Electromigration damage in mechanically deformed Al conductor lines: dislocations as fast diffusion paths. Acta Mater 48:2199–2208CrossRef Baker SP, Joo YC, Knaub MP et al (2000) Electromigration damage in mechanically deformed Al conductor lines: dislocations as fast diffusion paths. Acta Mater 48:2199–2208CrossRef
8.
Zurück zum Zitat Frost HJ, Ashby MF (1982) Deformation-mechanism maps: the plasticity and creep of metals and ceramics. Pergamon Press, Oxford Frost HJ, Ashby MF (1982) Deformation-mechanism maps: the plasticity and creep of metals and ceramics. Pergamon Press, Oxford
9.
Zurück zum Zitat Suo Z (1994) Electromigration-induced dislocation climb and multiplication in conducting lines. Acta Metall Mater 42:3581–3588CrossRef Suo Z (1994) Electromigration-induced dislocation climb and multiplication in conducting lines. Acta Metall Mater 42:3581–3588CrossRef
10.
Zurück zum Zitat Oates AS (1996) Electromigration transport mechanisms in al thin-film conductors. J Appl Phys 79:163–169CrossRef Oates AS (1996) Electromigration transport mechanisms in al thin-film conductors. J Appl Phys 79:163–169CrossRef
11.
Zurück zum Zitat Black JR (1967) Mass transport of aluminum by momentum exchange with conducting electrons. In: 6th annual IEEE international reliability physics symposium proceeding, Los Angeles, 6–8 Nov 1967 Black JR (1967) Mass transport of aluminum by momentum exchange with conducting electrons. In: 6th annual IEEE international reliability physics symposium proceeding, Los Angeles, 6–8 Nov 1967
12.
Zurück zum Zitat Kirchheim R, Kaeber U (1991) Atomistic and computer modeling of metallization failure of integrated circuits by electromigration. J Appl Phys 70:172–181CrossRef Kirchheim R, Kaeber U (1991) Atomistic and computer modeling of metallization failure of integrated circuits by electromigration. J Appl Phys 70:172–181CrossRef
13.
Zurück zum Zitat Korhonen MA, Borgesen P, Tu KN et al (1993) Stress evolution due to electromigration in confined metal lines. J Appl Phys 73:3790–3799CrossRef Korhonen MA, Borgesen P, Tu KN et al (1993) Stress evolution due to electromigration in confined metal lines. J Appl Phys 73:3790–3799CrossRef
14.
15.
Zurück zum Zitat Hau-Riege CS, Marathe AP, Pham V (2002) The effect of line length on the electromigration reliability of Cu interconnects. In: Proceedings of the advanced metallization conference, vol 169 Hau-Riege CS, Marathe AP, Pham V (2002) The effect of line length on the electromigration reliability of Cu interconnects. In: Proceedings of the advanced metallization conference, vol 169
16.
Zurück zum Zitat Schafft HA, Grant TC, Saxena AN et al (1985) Electromigration and the current density dependence. In: Reliability physics symposium, Orlando Schafft HA, Grant TC, Saxena AN et al (1985) Electromigration and the current density dependence. In: Reliability physics symposium, Orlando
17.
Zurück zum Zitat Sigsbee RA (1973) Electromigration and metalization lifetimes. J Appl Phys 44:2533–2540CrossRef Sigsbee RA (1973) Electromigration and metalization lifetimes. J Appl Phys 44:2533–2540CrossRef
18.
Zurück zum Zitat Bobbio A, Saracco O (1975) A modified reliability expression for the electromigration time-to-failure. Micoelectron Reliab 14:431–433CrossRef Bobbio A, Saracco O (1975) A modified reliability expression for the electromigration time-to-failure. Micoelectron Reliab 14:431–433CrossRef
19.
Zurück zum Zitat Gan D, Ho PS, Pang Y et al (2006) Effect of passivation on stress relaxation in electroplated copper films. J Mater Res 21:1512–1518CrossRef Gan D, Ho PS, Pang Y et al (2006) Effect of passivation on stress relaxation in electroplated copper films. J Mater Res 21:1512–1518CrossRef
20.
Zurück zum Zitat Cai B, Kong QP, Lu L et al (1999) Interface controlled diffusional creep of nanocrystalline pure copper. Scripta Mater 41:755–759CrossRef Cai B, Kong QP, Lu L et al (1999) Interface controlled diffusional creep of nanocrystalline pure copper. Scripta Mater 41:755–759CrossRef
21.
Zurück zum Zitat Dickenscheid W, Birringer R, Gleiter H et al (1991) Investigation of self-diffusion in nanocrystalline copper by NMR. Solid State Commun 79:683–686CrossRef Dickenscheid W, Birringer R, Gleiter H et al (1991) Investigation of self-diffusion in nanocrystalline copper by NMR. Solid State Commun 79:683–686CrossRef
22.
Zurück zum Zitat Zschech E, Meyer MA, Langer E (2004) Effect of mass transport along interfaces and grain boundaries on copper interconnect degradation. In: MRS Proceedings, San Francisco, 12–16 Apr 2004 Zschech E, Meyer MA, Langer E (2004) Effect of mass transport along interfaces and grain boundaries on copper interconnect degradation. In: MRS Proceedings, San Francisco, 12–16 Apr 2004
Metadaten
Titel
Industrial Implications of Electromigration-Induced Plasticity in Cu Interconnects: Plasticity-Amplified Diffusivity
verfasst von
Arief Suriadi Budiman
Copyright-Jahr
2015
Verlag
Springer Singapore
DOI
https://doi.org/10.1007/978-981-287-335-4_5

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