Skip to main content
Erschienen in: Journal of Materials Science: Materials in Electronics 18/2020

10.08.2020

Influence of annealing temperature and electrical conductivity of α-Fe2O3 nanoparticles for Schottky barrier diode

verfasst von: P. Sangaiya, R. Jayaprakash

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 18/2020

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

The microwave irradiation route is adopted for synthesizing hematite nanoparticles. The occurrence of different stages in iron oxide nanoparticles due to annealing temperature is validated from its phase transition. The temperature variation for annealing process is made subsequently in this experiment in steps of 300 °C, 400 °C, 500 °C, 600 °C, 700 °C, 800 °C and 900 °C. The formation and deformation of α-Fe2O3 (hematite) phase is identified from this work. The morphology, crystallinity and consistency in particles size are estimated from XRD, SEM and TEM image. The decrease in particle size is due to phase transformation which is identified from 78 to 24 nm. The specified involvement of thermal stability is tested from TGA analysis which is confirmed from phase transition in the XRD. Change in bandgap energy and respective blue shift for less particle sizes are elucidated from UV-DRS and PL spectra. The elemental presence Fe 2p and O 1s spectra indicates the valence states of Fe3+ and O2− from XPS and the VSM results are confirmed according to the increase in saturation and decrease in coercivity tended towards soft magnetic behaviour due to phase transition. The DC electrical conductivity and activation energy are calculated from I–V studies. The Schottky barrier diode parameters of ideality factor (n), barrier height (Φb) and reverse saturation current (I0) is calculated for both dark and light conditions.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literatur
3.
Zurück zum Zitat R.M. Cornell, U. Schwertmann, The Iron Oxides Structure Properties, Reactions, Occurrence and Uses (VCH, Weinheim, 1996) R.M. Cornell, U. Schwertmann, The Iron Oxides Structure Properties, Reactions, Occurrence and Uses (VCH, Weinheim, 1996)
15.
Zurück zum Zitat S. Arun, Prasad, iron oxide nanoparticles synthesized by controlled bio-precipitation using leaf extract of Garlic Vine (Mansoa alliacea). Mater. Sci. Semicond. Process. 53, 79–83 (2016)CrossRef S. Arun, Prasad, iron oxide nanoparticles synthesized by controlled bio-precipitation using leaf extract of Garlic Vine (Mansoa alliacea). Mater. Sci. Semicond. Process. 53, 79–83 (2016)CrossRef
20.
Zurück zum Zitat M.F. Al-Kuhaili, M. Saleem, S.M.A. Durrani, Optical properties of iron oxide (α-Fe2O3)thin films deposited by the reactive evaporation of iron. J. Alloys Compd. 521, 178 (2012)CrossRef M.F. Al-Kuhaili, M. Saleem, S.M.A. Durrani, Optical properties of iron oxide (α-Fe2O3)thin films deposited by the reactive evaporation of iron. J. Alloys Compd. 521, 178 (2012)CrossRef
21.
Zurück zum Zitat E.L. Miller, D.L. Paluselli, B. Marsen, R.E. Rocheleau, Low-temperature reactively sputtered iron oxide for thin film devices. Thin Solid Films 466, 307–313 (2004)CrossRef E.L. Miller, D.L. Paluselli, B. Marsen, R.E. Rocheleau, Low-temperature reactively sputtered iron oxide for thin film devices. Thin Solid Films 466, 307–313 (2004)CrossRef
22.
Zurück zum Zitat P. Brahma, S. Dutta, M. Pal, D. Chakravorty, Magnetic and transport properties of nanostructured ferric oxide produced by mechanical attrition. J. Appl. Phys. 100, 0443021–443026 (2006)CrossRef P. Brahma, S. Dutta, M. Pal, D. Chakravorty, Magnetic and transport properties of nanostructured ferric oxide produced by mechanical attrition. J. Appl. Phys. 100, 0443021–443026 (2006)CrossRef
30.
Zurück zum Zitat N. Dharmarasu, S. Arulkumaran, R.R. Sumathi, P. Jayavel, J. Kumar, P. Magudapathy, K.G.M. Nair, Low energy proton irradiation induced interface defects on Pd/nGaAs Schottky diodes and its characteristics. Nucl. Instrum. Methods Phys. Res. B 140, 119–123 (1998)CrossRef N. Dharmarasu, S. Arulkumaran, R.R. Sumathi, P. Jayavel, J. Kumar, P. Magudapathy, K.G.M. Nair, Low energy proton irradiation induced interface defects on Pd/nGaAs Schottky diodes and its characteristics. Nucl. Instrum. Methods Phys. Res. B 140, 119–123 (1998)CrossRef
34.
Zurück zum Zitat Z. Çaldıran, A.R. Deniz, Y. Şahin, Ö. Metin, K. Meral, Ş. Aydoğan, The electrical characteristics of the Fe3O4/Si junctions. J. Alloys Compd. 552, 437–442 (2013)CrossRef Z. Çaldıran, A.R. Deniz, Y. Şahin, Ö. Metin, K. Meral, Ş. Aydoğan, The electrical characteristics of the Fe3O4/Si junctions. J. Alloys Compd. 552, 437–442 (2013)CrossRef
35.
Zurück zum Zitat A.R. Deniz, Z. Çaldıran, Ö. Metin, K. Meral, Ş. Aydoğan, The investigation of the electrical properties of Fe3O4/n-Si heterojunctions in a wide temperature range. J. Colloid Interface Sci. 473, 172–181 (2016)CrossRef A.R. Deniz, Z. Çaldıran, Ö. Metin, K. Meral, Ş. Aydoğan, The investigation of the electrical properties of Fe3O4/n-Si heterojunctions in a wide temperature range. J. Colloid Interface Sci. 473, 172–181 (2016)CrossRef
38.
Zurück zum Zitat N. Hamdaoui, R. Ajjel, B. Salem, M. Gendry, Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements. Mater. Sci. Semicond. Process. 26, 431–437 (2014)CrossRef N. Hamdaoui, R. Ajjel, B. Salem, M. Gendry, Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements. Mater. Sci. Semicond. Process. 26, 431–437 (2014)CrossRef
39.
Zurück zum Zitat R. Suresh, V. Ponnuswamy, C. Sankar, M. Manickama, R. Mariappan, IDC golf-ball structured thin films: preparation, characterization and photodiode properties. RSC Adv. 6, 53967 (2016)CrossRef R. Suresh, V. Ponnuswamy, C. Sankar, M. Manickama, R. Mariappan, IDC golf-ball structured thin films: preparation, characterization and photodiode properties. RSC Adv. 6, 53967 (2016)CrossRef
40.
Zurück zum Zitat R.K. Gupta, F. Yakuphanoglu, photoconductive Schottky diode based on Al/p-Si/SnS2/Ag for optical sensor application. Sol. Energy 86, 1539–1545 (2012)CrossRef R.K. Gupta, F. Yakuphanoglu, photoconductive Schottky diode based on Al/p-Si/SnS2/Ag for optical sensor application. Sol. Energy 86, 1539–1545 (2012)CrossRef
Metadaten
Titel
Influence of annealing temperature and electrical conductivity of α-Fe2O3 nanoparticles for Schottky barrier diode
verfasst von
P. Sangaiya
R. Jayaprakash
Publikationsdatum
10.08.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 18/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04080-5

Weitere Artikel der Ausgabe 18/2020

Journal of Materials Science: Materials in Electronics 18/2020 Zur Ausgabe

Neuer Inhalt