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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 4/2019

01.04.2019

Influence of confined phonon for the different models in GaAs quantum wells on the optically detected electrophonon resonance linewidth

verfasst von: Khoa Doan Quoc, Hien Nguyen Dinh

Erschienen in: Optical and Quantum Electronics | Ausgabe 4/2019

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Abstract

In this work, we use method of the operator projection to study in detail the influence of phonon confinement, which depicted in the Huang-Zhu models, Ridley’s guided, and Fuchs–Kliewer slab on the optically detected electrophonon resonance (ODEPR) effect and ODEPR linewidth in square quantum wells. In addition, the ODEPR linewidths the same as functions of the width of well and temperature are also achieved. By numerical calculations for quantum well of the GaAs, we can see that the linewidth reduces with respect to the width of the well and raises with temperature for the cases of bulk and confined phonons. Moreover, we cannot ignore the important role of the influence of phonon confinement in the narrow area of the width of well (\(L_{z} < 10\) nm), when considering the ODEPR linewidths.
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Metadaten
Titel
Influence of confined phonon for the different models in GaAs quantum wells on the optically detected electrophonon resonance linewidth
verfasst von
Khoa Doan Quoc
Hien Nguyen Dinh
Publikationsdatum
01.04.2019
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 4/2019
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-019-1824-x

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