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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 20/2018

28.08.2018

Influence of Mg2SiO4 addition on crystal structure and microwave properties of Mg2Al4Si5O18 ceramic system

verfasst von: Xue Dong, Chengli Sun, Hongyu Yang, Leiyu Yang, Shuren Zhang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 20/2018

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Abstract

In this work, (1 − x)Mg2Al4Si5O18–xMg2SiO4 (x = 0–80 wt%) composite dielectric ceramics were prepared via traditional solid-state reaction. The results indicate the sinterability of Mg2Al4Si5O18 ceramics is greatly enhanced with the increasing content of Mg2SiO4 by reducing densified temperature from 1460 to 1340 °C. Rietveld refinement analysis shows a great chemical compatibility between two phases. With the increase of Mg2SiO4 content, the densifications of ceramics can be improved. However, excessive amount of Mg2SiO4 induces abnormal grain growth, which deteriorates the microwave dielectric properties. At x = 50 wt%, low-εr dielectric ceramics with high Q × f value was obtained when sintered at 1340 °C: εr = 5.73, Q × f = 76,374 GHz and τf = − 24 ppm/ °C. Relative cheap raw materials and adjustable permittivity values, which makes it promising for low-permittivity microwave applications.
Vorheriger Artikel Systematic study of electronic properties of Fe-doped TiO2 nanoparticles by X-ray photoemission spectroscopy

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Metadaten
Titel
Influence of Mg2SiO4 addition on crystal structure and microwave properties of Mg2Al4Si5O18 ceramic system
verfasst von
Xue Dong
Chengli Sun
Hongyu Yang
Leiyu Yang
Shuren Zhang
Publikationsdatum
28.08.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 20/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9912-4

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