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Erschienen in: Optical and Quantum Electronics 4/2019

01.04.2019

Influence of the electromagnetic field on the transition of a two-level system in a Gaussian confinement potential with LO phonon and of thickness effects

verfasst von: Xu-Fang Bai, Yu-Wei Zhao, Wei Xin, Hong-Wu Yin, Eerdunchaolu

Erschienen in: Optical and Quantum Electronics | Ausgabe 4/2019

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Abstract

In this paper, the asymmetric Gaussian confinement potential and the parabolic confinement potential (PCP) are selected to describe the along growth direction and perpendicular to growth direction confinement potential (PC) of electron in a disk quantum dot, respectively. The phonons mean number and the energies of the ground and first excited states of the electron in a quantum dot with the polarization and the thickness effect are investigated by using Lee–Low–Pines unitary transformation and the Pekar-type variational method, and on the basis of the Fermi Golden Rule, the transition of the electron caused by the electromagnetic field is discussed. Our numerical results have displayed that the electric field and the magnetic field are an indispensable condition for the induced polaron transition. The weak electric field has a strong regulatory function on the transition. The influence of the well width \(L\) and the well depth \(V_{0}\) of the AGFCP on the mean number of phonons, energies and transition are important and interesting; it is also found in this work that the AGFCP is better than PCP in explaining the quantum size effect of QDs and modulating electron transition properties, respectively. This quantum system can be employed as a two-level quantum qubit.

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Metadaten
Titel
Influence of the electromagnetic field on the transition of a two-level system in a Gaussian confinement potential with LO phonon and of thickness effects
verfasst von
Xu-Fang Bai
Yu-Wei Zhao
Wei Xin
Hong-Wu Yin
Eerdunchaolu
Publikationsdatum
01.04.2019
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 4/2019
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-019-1825-9

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