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Journal of Electronic Testing
Erschienen in: Journal of Electronic Testing 4/2016

09.07.2016

Interconnect Reliability Analysis for Power Amplifier Based on Artificial Neural Networks

verfasst von: Qian Lin, Haipeng Fu, Feifei He, Qianfu Cheng

Erschienen in: Journal of Electronic Testing | Ausgabe 4/2016

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Abstract

In order to learn the interconnect reliability of the complicated integrated circuit, a power amplifier 3D model is constructed and analyzed. The modeling and computation are completely automatic using the APDL. In order to predict the interconnect reliability of the power amplifier for the given design index effectively, the artificial neural networks model is used, then the prediction can be done fast. Training the simulation data from ANSYS, the neural network is used to model the relationship between the input and output. Then, a reliability database can be obtained which can help the designer to get the reliability performance of any design solution and the tradeoff decisions on the transistor’s size and the operation condition.
Vorheriger Artikel Fault Diagnosis in Highly Dependable Medical Wearable Systems
Nächster Artikel A New Approach for Modeling Inconsistencies in Digital-Assisted Analog Design

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Metadaten
Titel
Interconnect Reliability Analysis for Power Amplifier Based on Artificial Neural Networks
verfasst von
Qian Lin
Haipeng Fu
Feifei He
Qianfu Cheng
Publikationsdatum
09.07.2016
Verlag
Springer US
Erschienen in
Journal of Electronic Testing / Ausgabe 4/2016
Print ISSN: 0923-8174
Elektronische ISSN: 1573-0727
DOI
https://doi.org/10.1007/s10836-016-5606-0

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