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Journal of Materials Engineering and Performance
Erschienen in: Journal of Materials Engineering and Performance 12/2015

01.12.2015

Interfacial Reaction and Shear Strength of SnAgCu/Ni/Bi2Te3-Based TE Materials During Aging

verfasst von: Hongyang Jing, Yuan Li, Lianyong Xu, Yongdian Han, Guoquan Lu, Hao Zhang

Erschienen in: Journal of Materials Engineering and Performance | Ausgabe 12/2015

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Abstract

As a diffusion barrier layer, Ni is widely applied in power electronics packaging, especially in thermoelectric devices. This paper presents the variation of Ni diffusion barrier layer during aging and failure mechanisms of thermoelectric device joints. The thermoelectric joint consists of Sn96.5Ag3.0Cu0.5 (SAC305) solder and Bi2Te3-based thermoelectric materials such as Bi0.5Sb1.5Te3 and Bi1.8Sb0.2Se0.15Te2.85 during service. The result shows that with the increasing aging time, Ni layer was constantly consumed by SAC305 and Bi2Te3-based thermoelectric materials simultaneously. The reaction products are (Cu,Ni)6Sn5 and NiTe or Ni(Bi,Te), respectively. Besides, the shear strength of SAC305/Bi0.5Sb1.5Te3 joint or SAC305/Bi1.8Sb0.2Se0.15Te2.85 joint gets gradually decreased and thermoelectric conversion performance gets worse. Meantime, the different failure mechanisms are also compared between SAC305/Bi0.5Sb1.5Te3 couple joints and SAC305/Bi1.8Sb0.2Se0.15Te2.85 couple joints.
Vorheriger Artikel Electroless Ni-P/SiC Nanocomposite Coatings With Small Amounts of SiC Nanoparticles for Superior Corrosion Resistance and Hardness
Nächster Artikel Effects of Carbon and Nitrogen on the Microstructure and Mechanical Properties of Carbonitrided Low-Carbon Steel

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Metadaten
Titel
Interfacial Reaction and Shear Strength of SnAgCu/Ni/Bi2Te3-Based TE Materials During Aging
verfasst von
Hongyang Jing
Yuan Li
Lianyong Xu
Yongdian Han
Guoquan Lu
Hao Zhang
Publikationsdatum
01.12.2015
Verlag
Springer US
Erschienen in
Journal of Materials Engineering and Performance / Ausgabe 12/2015
Print ISSN: 1059-9495
Elektronische ISSN: 1544-1024
DOI
https://doi.org/10.1007/s11665-015-1809-2

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